发明授权
- 专利标题： Semiconductor device including an insulating film and insulating pillars and manufacturing method of the semiconductor device
- 专利标题（中）： 包括绝缘膜和绝缘柱的半导体器件和半导体器件的制造方法
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申请号： US12081818申请日： 2008-04-22
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公开(公告)号： US07675183B2公开(公告)日： 2010-03-09
- 发明人: Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
- 申请人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JPP2001-057367 20010301; JPP2001-260644 20010830; JPP2001-378778 20011212; JPP2001-401293 20011228
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52
摘要：
A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
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