发明授权
- 专利标题： Vapor phase treatment of dielectric materials
- 专利标题（中）： 介电材料的气相处理
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申请号： US11086010申请日： 2005-03-22
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公开(公告)号： US07678712B2公开(公告)日： 2010-03-16
- 发明人: Anil S. Bhanap , Robert R. Roth , Kikue S. Burnham , Brian J. Daniels , Denis H. Endisch , Ilan Golecki
- 申请人： Anil S. Bhanap , Robert R. Roth , Kikue S. Burnham , Brian J. Daniels , Denis H. Endisch , Ilan Golecki
- 申请人地址： US NJ Morristown
- 专利权人： Honeywell International, Inc.
- 当前专利权人： Honeywell International, Inc.
- 当前专利权人地址： US NJ Morristown
- 代理机构： Roberts & Roberts, L.L.P.
- 代理商 Richard S. Roberts
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.
公开/授权文献
- US20060216952A1 Vapor phase treatment of dielectric materials 公开/授权日：2006-09-28
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