公开(公告)号：US07678712B2

公开(公告)日：2010-03-16

申请号：US11086010

申请日：2005-03-22

申请人： Anil S. Bhanap ,  Robert R. Roth ,  Kikue S. Burnham ,  Brian J. Daniels ,  Denis H. Endisch ,  Ilan Golecki

发明人： Anil S. Bhanap ,  Robert R. Roth ,  Kikue S. Burnham ,  Brian J. Daniels ,  Denis H. Endisch ,  Ilan Golecki

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/76814

摘要： The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.

摘要翻译： 本发明涉及一种用于涂覆有机硅酸盐玻璃介电薄膜的表面改性剂组合物的方法。 更具体地说，本发明涉及一种在底物上处理硅酸盐或有机硅酸盐电介质膜的方法，该膜包含硅烷醇部分或已从其中除去至少一些先前存在的含碳部分。 当膜是多孔的时，该处理向膜中加入含碳部分并且/或密封膜的表面孔。

公开(公告)号：US08475666B2

公开(公告)日：2013-07-02

申请号：US10940686

申请日：2004-09-15

申请人： Teresa A. Ramos ,  Robert R. Roth ,  Anil S. Bhanap ,  Paul G. Apen ,  Denis H. Endisch ,  Brian J. Daniels ,  Ananth Naman ,  Nancy Iwamoto ,  Roger Y. Leung

发明人： Teresa A. Ramos ,  Robert R. Roth ,  Anil S. Bhanap ,  Paul G. Apen ,  Denis H. Endisch ,  Brian J. Daniels ,  Ananth Naman ,  Nancy Iwamoto ,  Roger Y. Leung

IPC分类号： H01L21/30

CPC分类号： H01L21/02216 ,  H01L21/02126 ,  H01L21/316 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826

摘要： A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

摘要翻译： 一种增韧剂组合物，用于在施加到所述膜时增加有机硅酸盐玻璃介电膜的疏水性。 它包括能够通过甲硅烷基化将有机硅酸盐玻璃介电膜的硅烷醇部分烷基化或芳基化的组分和选自胺，鎓化合物和碱金属氢氧化物的活化剂。

公开(公告)号：US07153783B2

公开(公告)日：2006-12-26

申请号：US10886247

申请日：2004-07-07

申请人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Denis H. Endisch ,  Paul G. Apen ,  Brian J. Daniels ,  Deling Zhou ,  Ananth Naman

发明人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Denis H. Endisch ,  Paul G. Apen ,  Brian J. Daniels ,  Deling Zhou ,  Ananth Naman

IPC分类号： H01L21/31

CPC分类号： H01L21/02118 ,  H01L21/02318 ,  H01L21/3105 ,  H01L21/316

摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

公开(公告)号：US20090026924A1

公开(公告)日：2009-01-29

申请号：US11931088

申请日：2007-10-31

申请人： Roger Y. Leung ,  De-Ling Zhou ,  Wenya Fan ,  Peter A. Smith ,  Paul G. Apen ,  Brian J. Daniels ,  Ananth Naman ,  Teresa A. Ramos ,  Robert R. Roth

发明人： Roger Y. Leung ,  De-Ling Zhou ,  Wenya Fan ,  Peter A. Smith ,  Paul G. Apen ,  Brian J. Daniels ,  Ananth Naman ,  Teresa A. Ramos ,  Robert R. Roth

IPC分类号： H01L51/54 ,  H01L33/00 ,  B32B3/26 ,  B05D5/06 ,  H01L27/15

CPC分类号： C09D183/02 ,  H01L51/5262 ,  Y10T428/249953

摘要： A method for forming a substantially transparent nanoporous organosilicate film on a substantially transparent substrate, for use in optical lighting devices such as organic light emitting diodes (OLEDs). The method includes first preparing a composition comprising a silicon containing pre-polymer, a porogen, and a catalyst. The composition is coated onto a substrate which is substantially transparent to visible light, forming a film thereon. The film is then gelled by crosslinking and cured by heating, such that the resulting cured film is substantially transparent to visible light. It is preferred that both the substrate and the nanoporous film are at least 98% transparent to visible light. Optical devices which include the resulting structures of this invention exhibit improved light extraction and illuminance where the nanoporous organosilicate film has a low refractive index in the range of 1.05 to 1.4, serving as an impedance matching layer in such devices.

摘要翻译： 一种在基本上透明的基底上形成基本透明的纳米多孔有机硅酸盐膜的方法，用于诸如有机发光二极管（OLED）的光学照明装置中。 该方法包括首先制备包含含硅预聚物，致孔剂和催化剂的组合物。 将组合物涂布在对可见光基本透明的基底上，在其上形成膜。 然后通过交联使膜凝胶化并通过加热固化，使得所得固化膜对可见光基本上是透明的。 优选的是，衬底和纳米多孔膜对可见光透明至少98％。 包括本发明所得结构的光学器件表现出改进的光提取和照度，其中纳米多孔有机硅酸盐膜具有在1.05至1.4范围内的低折射率，用作这种器件中的阻抗匹配层。

公开(公告)号：US6004878A

公开(公告)日：1999-12-21

申请号：US22597

申请日：1998-02-12

申请人： Michael E. Thomas ,  Brian J. Daniels

发明人： Michael E. Thomas ,  Brian J. Daniels

IPC分类号： H01L21/336 ,  H01L21/44

CPC分类号： H01L29/66575 ,  H01L29/665

摘要： Sidewall spacers, adjacent a gate electrode and source/drain regions of a MOS transistor are formed of a dielectric material that can be etched selectively to the material selected as the isolation dielectric. A layer of silicide forming metal is deposited overlying the MOS transistor and heated, wherein silicide regions are formed where the metal makes contact with silicon, for example, in the gate electrode and source/drain regions. At least a portion of the sidewall spacers are etched-away and silicide stringers, if formed on the spacers, are removed.

摘要翻译： 与MOS晶体管的栅电极和源极/漏极区相邻的侧壁间隔物由可以选择性地选择为被选择为隔离电介质的材料的电介质材料形成。 一层形成硅化物的金属沉积在MOS晶体管的上方并被加热，其中形成硅化物区域，其中金属与硅接触，例如在栅电极和源/漏区。 侧壁间隔物的至少一部分被蚀刻掉，并且如果形成在间隔物上，则去除硅化物桁条。

公开(公告)号：US06583047B2

公开(公告)日：2003-06-24

申请号：US09748692

申请日：2000-12-26

申请人： Brian J. Daniels ,  Jude A. Dunne ,  Joseph T. Kennedy

发明人： Brian J. Daniels ,  Jude A. Dunne ,  Joseph T. Kennedy

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a microelectronic device while preventing photoresist poisoning. Various layers of conductive metals and dielectric materials are deposited onto a substrate in selective sequence to form an integrated circuit. Vias and trenches are formed throughout the structure by exposing and patterning a photoresist material. The dielectric materials of the insulating layers are protected from the photoresist to prevent chemical reactions which lead to photoresist poisoning. This is done by forming a modified surface layer on the dielectric material by either depositing an additional layer that covers the dielectric material, or by modifying the exposed surface of the dielectric material to a plasma or chemical treatment.

公开(公告)号：US06818552B2

公开(公告)日：2004-11-16

申请号：US10243528

申请日：2002-09-13

申请人： Brian J. Daniels ,  Jude A. Dunne ,  Joseph T. Kennedy

发明人： Brian J. Daniels ,  Jude A. Dunne ,  Joseph T. Kennedy

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a microelectronic device while preventing photoresist poisoning. Various layers of conductive metals and dielectric materials are deposited onto a substrate in selective sequence to form an integrated circuit. Vias and trenches are formed throughout the structure by exposing and patterning a photoresist material. The dielectric materials of the insulating layers are protected from the photoresist to prevent chemical reactions which lead to photoresist poisoning. This is done by forming a modified surface layer on the dielectric material by either depositing an additional layer that covers the dielectric material, or by modifying the exposed surface of the dielectric material to a plasma or chemical treatment.

摘要翻译： 在防止光致抗蚀剂中毒的同时形成微电子器件的方法。 各种导电金属和介电材料层以选择性顺序沉积到衬底上以形成集成电路。 通过曝光和图案化光致抗蚀剂材料，在整个结构中形成通孔和沟槽。 保护绝缘层的电介质材料免受光致抗蚀剂的阻碍，以防止导致光致抗蚀剂中毒的化学反应。 这可以通过在电介质材料上形成修饰的表面层，方法是沉积覆盖介电材料的附加层，或通过将介电材料的暴露表面改性为等离子体或化学处理。

公开(公告)号：US06600637B1

公开(公告)日：2003-07-29

申请号：US09541218

申请日：2000-04-03

申请人： Hong Wang ,  Robbee L. Grimm ,  Matthew T. Johnson ,  John P. Spangler ,  Craig A. Ballentine ,  Qing He ,  Steven C. Riemer ,  Brian J. Daniels

发明人： Hong Wang ,  Robbee L. Grimm ,  Matthew T. Johnson ,  John P. Spangler ,  Craig A. Ballentine ,  Qing He ,  Steven C. Riemer ,  Brian J. Daniels

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3106 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetic data storage and retrieval system has a bottom shield, a first half gap positioned on the bottom shield, a sensor layer positioned on the first half gap, a second half gap positioned on the sensor layer; and a top shield positioned on the second half gap. The sensor layer includes a magnetoresistive sensor having sidewalls and a barrier surrounding and in direct contact with the sidewalls of the magnetoresistive sensor.

摘要翻译： 磁数据存储和检索系统具有底屏蔽，位于底屏蔽上的第一半间隙，位于第一半间隙上的传感器层，位于传感器层上的第二半间隙; 以及位于第二半间隙上的顶部屏蔽。 传感器层包括磁阻传感器，该磁阻传感器具有围绕并与磁阻传感器的侧壁直接接触的侧壁和屏障。