Invention Grant
- Patent Title: Interferometer endpoint monitoring device
- Patent Title (中): 干涉仪终点监测装置
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Application No.: US11531467Application Date: 2006-09-13
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Publication No.: US07682984B2Publication Date: 2010-03-23
- Inventor: Khiem K. Nguyen , Peter Satitpunwaycha , Alfred W. Mak
- Applicant: Khiem K. Nguyen , Peter Satitpunwaycha , Alfred W. Mak
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.
Public/Granted literature
- US20070023393A1 INTERFEROMETER ENDPOINT MONITORING DEVICE Public/Granted day:2007-02-01
Information query
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