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16 条记录 (耗时 0.025 秒)

    Interferometer endpoint monitoring device
    1.
    发明授权
    Interferometer endpoint monitoring device 有权
    干涉仪终点监测装置

    公开(公告)号：US07682984B2

    公开(公告)日：2010-03-23

    申请号：US11531467

    申请日：2006-09-13

    申请人： Khiem K. Nguyen ,  Peter Satitpunwaycha ,  Alfred W. Mak

    发明人： Khiem K. Nguyen ,  Peter Satitpunwaycha ,  Alfred W. Mak

    IPC分类号： H01L21/302

    CPC分类号： G03F1/80 ,  H01J37/321 ,  H01J37/32935

    摘要： A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.

    摘要翻译： 光掩模蚀刻室，其包括设置在室内的基板支撑构件。 衬底支撑构件被配置为支撑光掩模衬底。 腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。

    Mask etch plasma reactor with variable process gas distribution
    2.
    发明授权
    Mask etch plasma reactor with variable process gas distribution 有权
    具有可变工艺气体分布的掩模蚀刻等离子体反应器

    公开(公告)号：US07976671B2

    公开(公告)日：2011-07-12

    申请号：US11589426

    申请日：2006-10-30

    申请人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    发明人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    IPC分类号： H01L21/3063 ,  C23C16/505

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.

    摘要翻译： 用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括 外表面和内表面。 耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。 多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。 工艺气体供应提供工艺气体。 在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。 在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口 环的表面和（b）阀控制输入。 气阀配置控制器控制每个阀的阀门控制输入。

    Workpiece rotation apparatus for a plasma reactor system
    4.
    发明申请
    Workpiece rotation apparatus for a plasma reactor system 审中-公开
    用于等离子体反应器系统的工件旋转装置

    公开(公告)号：US20080099451A1

    公开(公告)日：2008-05-01

    申请号：US11589498

    申请日：2006-10-30

    申请人： Richard Lewington ,  Khiem K. Nguyen ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Madhavi R. Chandrachood ,  Scott Alan Anderson

    发明人： Richard Lewington ,  Khiem K. Nguyen ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Madhavi R. Chandrachood ,  Scott Alan Anderson

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/67766 ,  H01L21/67069

    摘要： A plasma processing system for processing a planar workpiece is provided that has the capability of changing the rotational position of a workpiece relative to a plasma processing chamber of the system. The system workpiece transfer apparatus coupled to the reactor chambers of the system. The workpiece transfer apparatus is capable of transferring workpieces to and from each of the chambers. The system further includes a factory interface coupled to the workpiece transfer apparatus for transferring workpieces from and to a factory environment external of the plasma processing system. The factory interface includes (a) a frame defining an internal volume, (b) a rotatable and translatable arm supported on the frame within the internal volume, (c) a workpiece-handling blade attached to an outer end of the arm, and (d) a stationary workpiece-holding support bracket that facilitates rotation of a workpiece.

    摘要翻译： 提供了一种用于处理平面工件的等离子体处理系统，其具有改变工件相对于系统的等离子体处理室的旋转位置的能力。 系统工件传送装置耦合到系统的反应室。 工件传送装置能够将工件传送到每个室中。 该系统还包括耦合到工件传送装置的工厂接口，用于从等离子体处理系统外部的工厂环境传送工件。 工厂接口包括（a）限定内部容积的框架，（b）支撑在内部容积内的框架上的可旋转和可平移臂，（c）附接到臂的外端的工件处理刀片，和 d）固定的工件保持支撑支架，其有助于工件的旋转。

    Plasma reactor for processing a transparent workpiece with backside process endpoint detection
    7.
    发明申请
    Plasma reactor for processing a transparent workpiece with backside process endpoint detection 审中-公开
    用于处理透明工件的等离子体反应器，具有背面处理端点检测

    公开(公告)号：US20080099437A1

    公开(公告)日：2008-05-01

    申请号：US11589476

    申请日：2006-10-30

    申请人： Richard Lewington ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Darin Bivens ,  Madhavi R. Chandrachood ,  Ajay Kumar

    发明人： Richard Lewington ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Darin Bivens ,  Madhavi R. Chandrachood ,  Ajay Kumar

    IPC分类号： H01L21/3065

    CPC分类号： G03F1/80 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972

    摘要： A plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer that is transparent at least within a range of wavelengths. The reactor includes a vacuum chamber having a sidewall and a ceiling. A workpiece support pedestal has a support surface facing said ceiling and lying within said chamber for supporting a workpiece. A passage extends through said workpiece support pedestal from a bottom thereof and forms an opening through said support surface. The reactor further includes an optical fiber extending through said passage. The optical fiber has: (a) a viewing end with a field of view through said opening in said support surface, and (b) an output end outside of said chamber. The reactor also includes an optical sensor coupled to said output end of said optical fiber which is responsive in said range of wavelengths.

    摘要翻译： 提供等离子体反应器，用于处理至少在波长范围内透明的工件，例如透明掩模或半导体晶片。 反应器包括具有侧壁和天花板的真空室。 工件支撑基座具有面向所述天花板并位于所述腔室内的支撑表面，用于支撑工件。 通道从其底部延伸穿过所述工件支撑座，并形成通过所述支撑表面的开口。 反应器还包括延伸穿过所述通道的光纤。 光纤具有：（a）通过所述支撑表面中的所述开口具有视场的观察端，以及（b）所述室外的输出端。 反应器还包括耦合到所述光纤的所述输出端的光学传感器，其在所述波长范围内是响应的。

    Process for etching a transparent workpiece including backside endpoint detection steps
    9.
    发明申请
    Process for etching a transparent workpiece including backside endpoint detection steps 有权
    用于蚀刻透明工件的工艺，包括背面端点检测步骤

    公开(公告)号：US20080099432A1

    公开(公告)日：2008-05-01

    申请号：US11589652

    申请日：2006-10-30

    申请人： Richard Lewington ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Darin Bivens ,  Madhavi R. Chandrachood ,  Ajay Kumar

    发明人： Richard Lewington ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Darin Bivens ,  Madhavi R. Chandrachood ,  Ajay Kumar

    IPC分类号： C23F1/00

    CPC分类号： G03F1/80 ,  H01J37/32963

    摘要： A method is provided for defining a pattern on a workpiece such as a transparent substrate or mask or a workpiece that is at least transparent within a range of optical wavelengths. The method includes defining a photoresist pattern on the top surface of the mask, the pattern including a periodic structure having a periodic spacing between elements of the structure. The method further includes placing the mask on a support pedestal in a plasma reactor chamber and generating a plasma in the chamber to etch the top surface of the mask through openings in the photoresist pattern. The method also includes transmitting light through the pedestal and through the bottom surface of the mask, while viewing through the support pedestal light reflected from the periodic structure and detecting an interference pattern in the reflected light. The method further includes determining from the interference pattern a depth to which periodic structure has been etched in the top surface.

    摘要翻译： 提供了一种用于在诸如透明基板或掩模或在光波长范围内至少透明的工件的工件上限定图案的方法。 该方法包括在掩模的顶表面上限定光致抗蚀剂图案，该图案包括在该结构的元件之间具有周期性间隔的周期性结构。 该方法还包括将掩模放置在等离子体反应器室中的支撑基座上并在腔室中产生等离子体，以通过光致抗蚀剂图案中的开口蚀刻掩模的顶表面。 该方法还包括通过基座传送光并通过掩模的底表面，同时通过从周期性结构反射的支撑基座光线观察并检测反射光中的干涉图案。 该方法还包括从干涉图案确定在顶表面中蚀刻了周期结构的深度。

    Mask etch plasma reactor with variable process gas distribution
    10.
    发明申请
    Mask etch plasma reactor with variable process gas distribution 有权
    具有可变工艺气体分布的掩模蚀刻等离子体反应器

    公开(公告)号：US20080102202A1

    公开(公告)日：2008-05-01

    申请号：US11589426

    申请日：2006-10-30

    申请人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    发明人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.

    摘要翻译： 用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括 外表面和内表面。 耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。 多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。 工艺气体供应提供工艺气体。 在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。 在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口 环的表面和（b）阀控制输入。 气阀配置控制器控制每个阀的阀门控制输入。