发明授权
- 专利标题： Formation of a silicon oxide interface layer during silicon carbide etch stop deposition to promote better dielectric stack adhesion
- 专利标题（中）： 在碳化硅蚀刻停止沉积期间形成氧化硅界面层以促进更好的介电堆叠粘附
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申请号： US11750669申请日： 2007-05-18
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公开(公告)号： US07682989B2公开(公告)日： 2010-03-23
- 发明人: Laura M. Matz , Ting Y. Tsui , Thad E. Briggs , Robert Kraft
- 申请人： Laura M. Matz , Ting Y. Tsui , Thad E. Briggs , Robert Kraft
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
In accordance with the present teachings, semiconductor devices and methods of making semiconductor devices and dielectric stack in an integrated circuit are provided. The method of forming a dielectric stack in an integrated circuit can include providing a semiconductor structure including one or more copper interconnects and forming an etch stop layer over the semiconductor structure in a first processing chamber. The method can also include forming a thin silicon oxide layer over the etch stop layer in the first processing chamber and forming an ultra low-k dielectric layer over the thin silicon oxide layer in a second processing chamber, wherein forming the thin silicon oxide layer improves adhesion between the etch stop layer and the ultra low-k dielectric as compared to a dielectric stack that is devoid of the thin silicon oxide layer between the etch stop layer and the ultra low-k dielectric.