发明授权
- 专利标题： Substrate processing method and manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的基板加工方法及其制造方法
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申请号： US11411139申请日： 2006-04-26
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公开(公告)号： US07683291B2公开(公告)日： 2010-03-23
- 发明人: Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
- 申请人： Kei Hayasaki , Tsuyoshi Shibata , Koutarou Sho , Shinichi Ito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-128230 20050426
- 主分类号： A21B1/00
- IPC分类号： A21B1/00 ; C23C16/00
摘要：
According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.