Invention Grant
US07683422B2 Non-volatile memory devices with wraparound-shaped floating gate electrodes and methods of forming same
失效
具有环绕形状的浮栅电极的非易失性存储器件及其形成方法
- Patent Title: Non-volatile memory devices with wraparound-shaped floating gate electrodes and methods of forming same
- Patent Title (中): 具有环绕形状的浮栅电极的非易失性存储器件及其形成方法
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Application No.: US11464324Application Date: 2006-08-14
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Publication No.: US07683422B2Publication Date: 2010-03-23
- Inventor: Woon-Kyung Lee , Jeong-Hyuk Choi , Jai-Hyuk Song
- Applicant: Woon-Kyung Lee , Jeong-Hyuk Choi , Jai-Hyuk Song
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2005-0100411 20051024
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
Non-volatile memory devices include memory cells therein with reduced cell-to-cell coupling capacitance. These memory cells include floating gate electrodes with open-ended wraparound shapes that operate to reduce the cell-to-cell coupling capacitance in a bit line direction, while still maintaining a high coupling ratio between control and floating gate electrodes within each memory cell.
Public/Granted literature
- US20070090445A1 Non-Volatile Memory Devices with Wraparound-Shaped Floating Gate Electrodes and Methods of Forming Same Public/Granted day:2007-04-26
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