发明授权
- 专利标题： Resist film removing method
- 专利标题（中）： 抗蚀膜去除方法
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申请号： US11543819申请日： 2006-10-06
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公开(公告)号： US07691210B2公开(公告)日： 2010-04-06
- 发明人: Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
- 申请人： Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Smith, Gambrell & Russell, LLP
- 优先权： JP2005-296632 20051011
- 主分类号： B08B3/00
- IPC分类号： B08B3/00
摘要：
A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.
公开/授权文献
- US20070082496A1 Resist film removing method 公开/授权日：2007-04-12