公开(公告)号：US07691210B2

公开(公告)日：2010-04-06

申请号：US11543819

申请日：2006-10-06

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Tadashi Iino

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Tadashi Iino

IPC分类号： B08B3/00

CPC分类号： G03F7/42 ,  G03F7/423

摘要： A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.

摘要翻译： 用于除去设置在基板上并且在表面上具有固化层的抗蚀剂膜的抗蚀剂膜去除方法包括用保护膜覆盖抗蚀剂膜的表面; 导致用保护膜覆盖的抗蚀剂膜突然出现; 导致抗蚀剂膜和保护膜变质，引起爆裂，溶于水; 并进行净化水清洗，从基板除去抗蚀剂膜和保护膜变性以溶于水。

公开(公告)号：US20070082496A1

公开(公告)日：2007-04-12

申请号：US11543819

申请日：2006-10-06

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Tadashi Iino

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Tadashi Iino

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F7/42 ,  G03F7/423

摘要： A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.

摘要翻译： 用于除去设置在基板上并且在表面上具有固化层的抗蚀剂膜的抗蚀剂膜去除方法包括用保护膜覆盖抗蚀剂膜的表面; 导致用保护膜覆盖的抗蚀剂膜突然出现; 导致抗蚀剂膜和保护膜变质，引起爆裂，溶于水; 并进行净化水清洗，从基板除去抗蚀剂膜和保护膜变性以溶于水。

公开(公告)号：US08651121B2

公开(公告)日：2014-02-18

申请号：US12372265

申请日：2009-02-17

申请人： Takehiko Orii ,  Kenji Sekiguchi

发明人： Takehiko Orii ,  Kenji Sekiguchi

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  H01L21/67028 ,  H01L21/67034

摘要： A substrate processing apparatus includes a chamber configured to dispose a substrate to be processed with a substrate holder, a spin chuck to rotate the substrate, a gas discharging head configured to discharge a dehumidified gas to the substrate, a processing liquid supply nozzle, an IPA supply nozzle, and a driving device configured to move the gas discharging head between a retreat position of an upper part of the chamber and an approach position near the substrate. In particular, the gas discharging head is positioned at the approach position when the IPA is supplied to the substrate so that the dehumidified gas is supplied from the gas discharging head to the substrate when the IPA is supplied to the substrate.

摘要翻译： 一种基板处理装置，包括：配置成用基板保持件配置被处理基板的室，旋转基板的旋转卡盘，将排出除湿气体排出到基板的排气头，处理液供给喷嘴，IPA 供给喷嘴和驱动装置，该驱动装置构造成使所述气体排出头在所述室的上部的后退位置和所述基板附近的接近位置之间移动。 特别地，当将IPA提供给基板时，气体放电头位于接近位置，使得当将IPA供给到基板时，将除气从气体排出头供应到基板。

公开(公告)号：US07803230B2

公开(公告)日：2010-09-28

申请号：US10593560

申请日：2005-04-05

申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置 由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

公开(公告)号：US20070175501A1

公开(公告)日：2007-08-02

申请号：US10593560

申请日：2005-04-05

申请人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

发明人： Masaru Amai ,  Kenji Sekiguchi ,  Takehiko Orii ,  Hiroki Ohno ,  Satoru Tanaka ,  Takuya Mori

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  B08B1/04 ,  H01L21/67046

摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

摘要翻译： 在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从 衬底W的中心部分朝向其周边部分。 由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。 在刷子3的清洁位置Sb从基板W的中心部朝向其周边部移动的过程中，双流体喷嘴的清洁位置Sb位于更靠近中心P 0 < >刷3的清洁位置Sb。 由于防止刷子的污染再次粘附到晶片上，所以可以避免晶片W被污染。

公开(公告)号：US20070223342A1

公开(公告)日：2007-09-27

申请号：US11578099

申请日：2005-10-12

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： C23F1/00 ,  G11B31/00 ,  H01L21/306

CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US08337659B2

公开(公告)日：2012-12-25

申请号：US11578099

申请日：2005-10-12

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US07806989B2

公开(公告)日：2010-10-05

申请号：US11394337

申请日：2006-03-31

申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

公开(公告)号：US20070141849A1

公开(公告)日：2007-06-21

申请号：US10591474

申请日：2005-03-09

申请人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

发明人： Itaru Kanno ,  Yusaku Hirota ,  Kenji Sekiguchi ,  Hiroshi Nagayasu ,  Shouichi Shimose

IPC分类号： B08B3/00 ,  B41J2/05 ,  H01L21/302

CPC分类号： H01L21/67051 ,  B01F3/04049 ,  B05B7/0433 ,  B08B3/02 ,  Y10S134/902

摘要： An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.

摘要翻译： 本发明的目的是在二流体喷嘴中用于清洁衬底的液滴的均匀的粒子直径和速度，这些衬底在内部混合气体和液体，并且用气体注入液滴以便清洁衬底。 用于清洁基板的双流体喷嘴具有用于供应气体的气体供应通道，用于供应液体的液体供应通道和用于引出内部形成的液滴的引出通道，其中用于将液滴注入到喷嘴 外部形成在引出通道的前端，并且其中注入口的横截面面积Sb形成为小于引出通道的横截面积Sa，横截面面积Sc 气体供给通道的出口形成为小于引出通道的横截面面积Sa。

公开(公告)号：US5695817A

公开(公告)日：1997-12-09

申请号：US512018

申请日：1995-08-07

申请人： Kiyohisa Tateyama ,  Kimio Motoda ,  Kenji Sekiguchi ,  Tsutae Omori

发明人： Kiyohisa Tateyama ,  Kimio Motoda ,  Kenji Sekiguchi ,  Tsutae Omori

IPC分类号： B05D1/00 ,  G03F7/16 ,  B05D3/12

CPC分类号： B05D1/005 ,  G03F7/162

摘要： A method of forming a coating film, in which the coating film is formed by supplying a coating liquid onto a surface of a substrate, while the substrate housed in a processing vessel is rotated together with the processing vessel, includes the steps of coating the surface of the substrate with a solvent, supplying the coating liquid to the substrate, rotating the substrate and the processing vessel at a first rotation speed to diffuse the coating liquid on the surface of the substrate, closing the processing vessel with a lid to seal the substrate in the processing vessel, and rotating the processing vessel with the lid and the substrate at a second rotation speed to uniform a film thickness of the coating film.

摘要翻译： 一种形成涂膜的方法，其中通过将涂覆液体供给到基材的表面上形成涂膜，同时容纳在处理容器中的基材与处理容器一起旋转，包括以下步骤：将表面 的溶剂，将涂布液供给到基板，以第一旋转速度旋转基板和处理容器，以将涂布液扩散到基板的表面上，用盖子封闭处理容器以密封基板 在处理容器中，并且以第二转速旋转具有盖和基板的处理容器以使涂膜的膜厚均匀。