发明授权
- 专利标题: Phase shifter with photonic band gap structure using ferroelectric thin film
- 专利标题(中): 具有光子带隙结构的移相器使用铁电薄膜
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申请号: US11722299申请日: 2005-12-20
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公开(公告)号: US07692516B2公开(公告)日: 2010-04-06
- 发明人: Young-Tae Kim , Han-Cheol Ryu , Min-Hwan Kwak , Seung-Eon Moon , Su-Jae Lee , Kwang-Yong Kang
- 申请人: Young-Tae Kim , Han-Cheol Ryu , Min-Hwan Kwak , Seung-Eon Moon , Su-Jae Lee , Kwang-Yong Kang
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 代理机构: Kile Goekjian Reed & McManus PLLC
- 优先权: KR10-2004-0108981 20041220
- 国际申请: PCT/KR2005/004390 WO 20051220
- 国际公布: WO2006/068395 WO 20060629
- 主分类号: H01P1/18
- IPC分类号: H01P1/18 ; H01P3/08
摘要:
Provided are a phase shifter with a photonic band gap (PBG) structure using a ferroelectric thin film. The phase shifter includes a microstrip transmission line acting as a microwave input/output line and a plurality of tunable capacitors arranged in the microstrip transmission line at regular intervals. Electrodes disposed on a substrate apply DC voltages to the plurality of tunable capacitors. Radio frequency (RF) chokes and quarter wavelength radial-stubs are connected between the electrodes and the microstrip transmission line in order to prevent high frequency signals from flowing into a DC bias terminal. A plurality of PBGS are periodically arrayed on a ground plane of the substrate.
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