发明授权
US07696097B2 Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires
有权
水平纳米线的位置选择性生长方法，纳米线生长方法和包含纳米线的纳米器件
- 专利标题： Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires
- 专利标题（中）： 水平纳米线的位置选择性生长方法，纳米线生长方法和包含纳米线的纳米器件
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申请号： US12051513申请日： 2008-03-19
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公开(公告)号： US07696097B2公开(公告)日： 2010-04-13
- 发明人: Eun Kyung Lee , Byoung Lyong Choi , Young Kuk , Je Hyuk Choi , Hun Huy Jung
- 申请人： Eun Kyung Lee , Byoung Lyong Choi , Young Kuk , Je Hyuk Choi , Hun Huy Jung
- 申请人地址： KR KR
- 专利权人： Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- 当前专利权人： Samsung Electronics Co., Ltd.,Seoul National University Industry Foundation
- 当前专利权人地址： KR KR
- 代理机构： Cantor Colburn LLP
- 优先权： KR10-2007-0087146 20070829
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/311
摘要：
Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.
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