发明授权
- 专利标题： Solid state imaging apparatus method for fabricating the same and camera using the same
- 专利标题（中）： 固态成像装置的制造方法及使用其的相机
-
申请号： US10571426申请日： 2005-06-28
-
公开(公告)号： US07696592B2公开(公告)日： 2010-04-13
- 发明人: Mitsuyoshi Mori , Daisuke Ueda
- 申请人： Mitsuyoshi Mori , Daisuke Ueda
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2004-201047 20040707
- 国际申请： PCT/JP2005/011825 WO 20050628
- 国际公布： WO2006/006392 WO 20060119
- 主分类号： H01L31/058
- IPC分类号： H01L31/058
摘要：
A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.