公开(公告)号：US07696592B2

公开(公告)日：2010-04-13

申请号：US10571426

申请日：2005-06-28

申请人： Mitsuyoshi Mori ,  Daisuke Ueda

发明人： Mitsuyoshi Mori ,  Daisuke Ueda

IPC分类号： H01L31/058

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.

摘要翻译： 固态成像装置包括形成在硅衬底的成像区域中的多个光电转换部分和嵌入在位于光电转换部分周围的硅衬底的至少一部分中的隔离沟槽中的嵌入层。 嵌入层由具有大于硅的热膨胀系数和等于或小于硅的热膨胀系数的隔离材料制成。

公开(公告)号：US08354693B2

公开(公告)日：2013-01-15

申请号：US12035340

申请日：2008-02-21

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Daisuke Ueda ,  Toshinobu Matsuno

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Daisuke Ueda ,  Toshinobu Matsuno

IPC分类号： H01L31/0336

CPC分类号： H01L27/14689 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14687

摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.

摘要翻译： 固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。 光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。 提供第四半导体层可以减少在黑暗条件下流动的电流。

公开(公告)号：US20080105906A1

公开(公告)日：2008-05-08

申请号：US10571426

申请日：2005-06-28

申请人： Mitsuyoshi Mori ,  Daisuke Ueda

发明人： Mitsuyoshi Mori ,  Daisuke Ueda

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00 ,  H01L21/8238

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.

摘要翻译： 固态成像装置包括形成在硅衬底的成像区域中的多个光电转换部分和嵌入在位于光电转换部分周围的硅衬底的至少一部分中的隔离沟槽中的嵌入层。 嵌入层由具有大于硅的热膨胀系数和等于或小于硅的热膨胀系数的隔离材料制成。

公开(公告)号：US20070230722A1

公开(公告)日：2007-10-04

申请号：US11651024

申请日：2007-01-09

申请人： Mitsuyoshi Mori ,  Daisuke Ueda

发明人： Mitsuyoshi Mori ,  Daisuke Ueda

IPC分类号： H04R25/00

CPC分类号： H04R19/016 ,  H01G7/021

摘要： An electret condenser microphone (ECM) forms an air-gap capacitor structure in which an upper electrode and a lower electrode are opposed to each other with its hollow portion interposed therebetween, and an electret film made of a charge retention material is formed between the electrodes. The ECM is formed continuously with a semiconductor substrate, and the electret film is made of an amorphous perfluoropolymeric resin. The electret film made of such a material can be formed on the substrate by spin coating. This facilitates reducing the thickness of the electret film. In addition, the film can be easily etched by a fluorine based gas used in a semiconductor process. This permits fine patterning, resulting in the reduced area of a condenser.

摘要翻译： 驻极体电容式麦克风（ECM）形成气隙电容器结构，其中上电极和下电极彼此相对并且其中空部分彼此相对，并且在电极之间形成由电荷保持材料制成的驻极体膜 。 ECM与半导体衬底连续形成，驻极体膜由无定形全氟聚合物树脂制成。 由这种材料制成的驻极体膜可以通过旋涂形成在基板上。 这有助于减小驻极体膜的厚度。 此外，可以通过半导体工艺中使用的氟基气体容易地蚀刻该膜。 这允许精细图案化，导致冷凝器的面积减小。

公开(公告)号：US07569906B2

公开(公告)日：2009-08-04

申请号：US11702531

申请日：2007-02-06

申请人： Mitsuyoshi Mori ,  Keisuke Tanaka ,  Takumi Yamaguchi ,  Takuma Katayama

发明人： Mitsuyoshi Mori ,  Keisuke Tanaka ,  Takumi Yamaguchi ,  Takuma Katayama

IPC分类号： H01L29/00 ,  H01L29/84

CPC分类号： H04R19/04 ,  H01L25/162 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.

摘要翻译： 第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。 第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。 第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。 在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。

公开(公告)号：US20070012968A1

公开(公告)日：2007-01-18

申请号：US11523578

申请日：2006-09-20

申请人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

发明人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.

公开(公告)号：US20050045925A1

公开(公告)日：2005-03-03

申请号：US10930814

申请日：2004-09-01

申请人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

发明人： Shinji Yoshida ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H01L21/8238 ,  H01L27/148

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H01L27/1463

摘要： The present invention is a solid-state imaging device formed on a silicon substrate 1 for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device comprises, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of the first conductivity type, a transistor and a device isolation region whose depth is less than the depth of the charge accumulation region of the first conductivity type, at which the impurity density is at maximum.

摘要翻译： 本发明是形成在硅基板1上的固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。 该固态成像装置包括针对每个像素的成像区域，该成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度 杂质密度最大的第一导电类型。

公开(公告)号：US4905471A

公开(公告)日：1990-03-06

申请号：US208602

申请日：1988-06-20

申请人： Mitsuyoshi Mori

发明人： Mitsuyoshi Mori

IPC分类号： F16H41/28

CPC分类号： F16H41/28

摘要： A great number of blades are disposed in a shell inside with appropriate distances left between them in a circumferential direction of a shell. Each blade has an approximately fan-shaped blade body and a flange protruding from an inner peripheral edge in a prescribed direction along a circumference of a shell. An outer peripheral edge of each blade is secured to the shell. The flange of each blade is made contact with a neighboring blade over the entire circumferential length of the blade, and these contacting portions are secured each other in a watertight manner. A core ring is not installed.

摘要翻译： 大量的叶片设置在壳体的内部，并且在壳体的圆周方向上留有适当的距离。 每个叶片具有近似扇形的叶片本体和沿壳体的圆周沿规定方向从内周边缘突出的凸缘。 每个叶片的外围边缘固定在壳体上。 每个叶片的凸缘在叶片的整个圆周长度上与相邻的叶片接触，并且这些接触部分以水密的方式彼此固定。 未安装核心环。

公开(公告)号：US08704321B2

公开(公告)日：2014-04-22

申请号：US13462889

申请日：2012-05-03

申请人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

IPC分类号： H01L29/51

CPC分类号： H01L27/14625 ,  H01L27/1464 ,  H01L27/14665 ,  H01L27/14685

摘要： Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

摘要翻译： 本发明的固体摄像装置是在半导体基板的第一面侧形成有配线层的背照明型固体摄像元件， 以及光接收从第一表面侧相反的第二表面侧入射的光的光接收部分，其中由具有自发极化的材料形成的自发偏振膜形成在光接收部分的光接收表面上。 因此，能够在受光部的受光面上形成空穴积聚层，能够抑制暗电流。

公开(公告)号：US08243176B2

公开(公告)日：2012-08-14

申请号：US12602747

申请日：2009-06-02

申请人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

发明人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N5/332

摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.

摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。