发明授权
- 专利标题： Type II interband heterostructure backward diodes
- 专利标题（中）： II型带间异质结反向二极管
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申请号： US11700442申请日： 2007-01-30
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公开(公告)号： US07700969B1公开(公告)日： 2010-04-20
- 发明人: Joel N. Schulman , David H. Chow , Chanh Nguyen
- 申请人： Joel N. Schulman , David H. Chow , Chanh Nguyen
- 申请人地址： US CA Malibu
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： US CA Malibu
- 代理机构： Tope-McKay & Assoc.
- 主分类号： H01L29/74
- IPC分类号： H01L29/74 ; H01L29/80 ; H01S3/00
摘要：
A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.