公开(公告)号：US07170105B1

公开(公告)日：2007-01-30

申请号：US10970359

申请日：2004-10-20

申请人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

发明人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

IPC分类号： H01L29/32 ,  H01L31/0336 ,  H01L31/072 ,  H01S5/00

CPC分类号： H01L29/88 ,  H01L29/205 ,  H01L29/885

摘要： A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.

摘要翻译： 一种半导体器件，其具有与具有第一价带边缘以上的能量的第一导带边缘的第一层的带间隧穿，其差异为第一带隙。 具有第二导带边缘的第二层，其具有高于第二价带边缘的能量，所述差异为第二带隙，并且所述第二层形成为允许电子载流子隧道输送。 第二层在第一和第三层之间，第三价带边缘和第三导带边缘之间的差异是第三带隙。 费米能级比第一价带边缘更接近第一导带边缘。 第二价带边缘在第一导带边缘之下。 第二导带边缘高于第三价带边缘。 费米能级比第三导带边缘更接近第三价带边缘。

公开(公告)号：US07700969B1

公开(公告)日：2010-04-20

申请号：US11700442

申请日：2007-01-30

申请人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

发明人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

IPC分类号： H01L29/74 ,  H01L29/80 ,  H01S3/00

CPC分类号： H01L29/885 ,  H01L29/205

摘要： A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.

摘要翻译： 一种半导体器件，其具有与具有第一价带边缘以上的能量的第一导带边缘的第一层的带间隧穿，其差异为第一带隙。 具有第二导带边缘的第二层，其具有高于第二价带边缘的能量，所述差异为第二带隙，并且所述第二层形成为允许电子载流子隧道输送。 第二层在第一和第三层之间，第三价带边缘和第三导带边缘之间的差异是第三带隙。 费米能级比第一价带边缘更接近第一导带边缘。 第二价带边缘在第一导带边缘之下。 第二导带边缘高于第三价带边缘。 费米能级比第三导带边缘更接近第三价带边缘。

公开(公告)号：US06323696B1

公开(公告)日：2001-11-27

申请号：US09456359

申请日：1999-12-07

申请人： Ronald M. Hickling ,  Joel N. Schulman ,  David H. Chow ,  Lap W. Chow ,  Hector J. De Los Santos

发明人： Ronald M. Hickling ,  Joel N. Schulman ,  David H. Chow ,  Lap W. Chow ,  Hector J. De Los Santos

IPC分类号： G11C2702

CPC分类号： B82Y10/00 ,  G11C27/024 ,  G11C2211/5614

摘要： A sample and hold circuit that is coupled to a control voltage source and a signal source has a sampling bridge coupled in series between a first resonant tunneling diode. The bridge comprises a plurality of diodes. The sampling bridge couples an input voltage signal that is to be sampled to a holding capacitor when the sampling bridge is forward biased. The bridge substantially decouples the input voltage signal from the holding capacitor when the sampling bridge diodes are reversed biased. The resonant tunneling diodes when reversed biased allow the bridge to be isolated from the control voltage source to allow the holding capacitor to float at the sampled value of the input voltage.

摘要翻译： 耦合到控制电压源和信号源的采样和保持电路具有串联耦合在第一谐振隧道二极管之间的采样电桥。 该桥包括多个二极管。 当采样桥正向偏置时，采样桥将要采样的输入电压信号耦合到保持电容。 当采样桥二极管反向偏置时，桥将输入电压信号与保持电容基本上分离。 当反向偏置时，谐振隧穿二极管允许桥接器与控制电压源隔离，以使保持电容器以输入电压的采样值浮动。

公开(公告)号：US5606178A

公开(公告)日：1997-02-25

申请号：US477683

申请日：1995-06-07

申请人： Joel N. Schulman ,  David H. Chow

发明人： Joel N. Schulman ,  David H. Chow

IPC分类号： H01L29/737 ,  H01L29/06

CPC分类号： B82Y10/00 ,  H01L29/7376

摘要： Base contacts are made to one or both barrier layers of a resonant tunneling bipolar transistor, rather than to the quantum well. This is made possible with the use of a type II rather than a type I energy band alignment in the active region.

摘要翻译： 基极触点被制成谐振隧穿双极晶体管的一个或两个阻挡层，而不是量子阱。 这可以通过在有源区域中使用II型而不是I型能带对准来实现。

公开(公告)号：US06812070B2

公开(公告)日：2004-11-02

申请号：US10339174

申请日：2003-01-08

申请人： Joel N. Schulman ,  David H. Chow

发明人： Joel N. Schulman ,  David H. Chow

IPC分类号： H01L21332

CPC分类号： H01L29/88

摘要： A method of epitaxially growing backward diodes and diodes grown by the method are presented herein. More specifically, the invention utilizes epitaxial-growth techniques such as molecular beam epitaxy in order to produce a thin, highly doped layer at the p-n junction in order to steepen the voltage drop at the junction, and thereby increase the electric field. By tailoring the p and n doping levels as well as adjusting the thin, highly doped layer, backward diodes may be consistently produced and may be tailored in a relatively easy and controllable fashion for a variety of applications. The use of the thin, highly doped layer provided by the present invention is discussed particularly in the context of InGaAs backward diode structures, but may be tailored to many diode types.

摘要翻译： 本文介绍了通过该方法生长的后向二极管和二极管外延生长的方法。 更具体地说，本发明利用诸如分子束外延的外延生长技术，以便在p-n结处产生薄的高掺杂层，以便使结点处的电压降变得更高，从而增加电场。 通过调整p和n掺杂水平以及调整薄的高掺杂层，可以一致地产生后向二极管，并且可以针对各种应用以相对容易和可控的方式进行调整。 本发明提供的薄的高掺杂层的使用在InGaAs后向二极管结构的上下文中被特别讨论，但是可以针对许多二极管类型而定制。

公开(公告)号：US06303941B1

公开(公告)日：2001-10-16

申请号：US09427196

申请日：1999-10-25

申请人： Yi-Ming Xie ,  Joel N. Schulman ,  David H. Chow

发明人： Yi-Ming Xie ,  Joel N. Schulman ,  David H. Chow

IPC分类号： H01L2906

CPC分类号： B82Y10/00 ,  H01L29/882 ,  H03M1/34

摘要： Presented is an integrated asymmetric resonant tunneling diode pair circuit exhibiting current-voltage characteristics providing multistable states which may be tailored for multistable solutions. Also presented are apparatus incorporating the invention therein, for which the invention provides a simple, integrated design that greatly reduces circuit complexity and size. The present invention is useful in all applications utilizing multiple peak characteristics of the current-voltage curve, such as multiple-valued logic analog-to-digital quantizers, frequency multiplication devices, waveform scrambling devices, memory operations, and parity-bit generation, among others.

摘要翻译： 提出了一种集成的非对称谐振隧道二极管对电路，其呈现提供多态状态的电流 - 电压特性，其可以针对多态解决方案。 还提出了结合本发明的装置，其本发明提供了一种简单的集成设计，大大降低了电路的复杂性和尺寸。 本发明在利用电流 - 电压曲线的多个峰值特性的所有应用中是有用的，例如多值逻辑模数 - 数字量化器，倍频器件，波形加扰器件，存储器操作和奇偶位产生，其中 其他。

公开(公告)号：US06734470B1

公开(公告)日：2004-05-11

申请号：US09397898

申请日：1999-09-17

申请人： Joel N. Schulman ,  David H. Chow

发明人： Joel N. Schulman ,  David H. Chow

IPC分类号： H01L2988

CPC分类号： B82Y10/00 ,  H01L27/0814 ,  H01L29/882

摘要： A method for producing laterally varying multiple diodes and their device embodiment are presented herein. As demonstrated, multiple resonant tunneling diodes are fabricated together utilizing a single epitaxial structure. Shallow, ion-implanted regions having varying depths, dx, define the collector contacts. Each diode is isolated electrically from the others by methods such as conventional mesa etching into the emitter layer. The varying depths, dx, provide means for varying the peak voltage of each individual diode. The peak voltage strongly depends on the depths, dx, because it comprises a space charge region where the electric field is high, and therefore the voltage drop is high. The invention disclosed herein is useful in applications such as high-speed circuits such as comparators, analog to digital converters, sample and hold circuits, logic devices, and frequency multipliers.

摘要翻译： 本文给出了一种生产横向变化的多个二极管及其器件实施例的方法。 如所证明的，使用单个外延结构将多个谐振隧道二极管制造在一起。 具有不同深度的浅的离子注入区域dx限定了集电极触点。 每个二极管通过诸如常规台面蚀刻到发射极层中的方法与其它二极管电隔离。 变化的深度dx提供了改变每个独立二极管的峰值电压的方法。 峰值电压强度取决于深度dx，因为它包括电场高的空间电荷区域，因此电压降很高。 本文公开的本发明在诸如比较器，模数转换器，采样和保持电路，逻辑器件和频率乘法器之类的高速电路的应用中是有用的。

公开(公告)号：US06507043B1

公开(公告)日：2003-01-14

申请号：US09398393

申请日：1999-09-17

申请人： David H. Chow ,  Joel N. Schulman

发明人： David H. Chow ,  Joel N. Schulman

IPC分类号： H01L2988

CPC分类号： H01L29/88

摘要： A method of epitaxially growing backward diodes as well as apparatus grown by the method are presented herein. More specifically, the invention utilizes epitaxial-growth techniques such as molecular beam epitaxy in order to produce a thin, highly doped layer at the p-n junction in order to steepen the voltage drop at the junction, and thereby increase the electric field. By tailoring the p and n doping levels as well as adjusting the thin, highly doped layer, backward diodes may be consistently produced and may be tailored in a relatively easy and controllable fashion for a variety of applications. The use of the thin, highly doped layer provided by the present invention is discussed particularly in the context of InGaAs backward diode structures, but may be tailored to many diode types.

摘要翻译： 本文提出了外延生长后向二极管的方法以及通过该方法生长的装置。 更具体地说，本发明利用诸如分子束外延的外延生长技术，以便在p-n结处产生薄的高掺杂层，以便使结点处的电压降变得更高，从而增加电场。 通过调整p和n掺杂水平以及调整薄的高掺杂层，可以一致地产生后向二极管，并且可以针对各种应用以相对容易和可控的方式进行调整。 本发明提供的薄的高掺杂层的使用在InGaAs后向二极管结构的上下文中被特别讨论，但是可以针对许多二极管类型而定制。

公开(公告)号：US5489786A

公开(公告)日：1996-02-06

申请号：US323200

申请日：1994-10-14

申请人： David H. Chow ,  Joel N. Schulman

发明人： David H. Chow ,  Joel N. Schulman

IPC分类号： H01L29/88 ,  H01L29/205

CPC分类号： B82Y10/00 ,  H01L29/882

摘要： A current-controlled resonant tunneling diode (RTD) having an InAs quantum well, AlGaSb barriers and InAs cladding layers is disclosed. The RTD of this invention displays an S-shaped negative differential resistance in its I-V relationship. As a result, the RTD displays the bistability necessary to greatly enhance the speed of operation of many key electronic components by eliminating the need for large load resistances in the circuit design.

摘要翻译： 公开了具有InAs量子阱，AlGaSb势垒和InAs覆层的电流控制谐振隧穿二极管（RTD）。 本发明的RTD以其I-V关系显示S形负差动电阻。 因此，RTD显示了通过消除对电路设计中的大负载电阻的需要来显示双重性，从而大大提高许多关键电子元件的操作速度。

公开(公告)号：US06635907B1

公开(公告)日：2003-10-21

申请号：US09441903

申请日：1999-11-17

申请人： Chanh N. Nguyen ,  Joel N. Schulman ,  David H. Chow

发明人： Chanh N. Nguyen ,  Joel N. Schulman ,  David H. Chow

IPC分类号： H01L29772

CPC分类号： H01L29/88

摘要： A backward diode including a heterostructure consisting of a first layer of InAs and second layer of GaSb or InGaSb with an interface layer consisting of an aluminum antimonide compound is presented. It is also disclosed that the presence of AlSb in the interface enhances the highly desirable characteristic of nonlinear current-voltage (I-V) curve near zero bias. The backward diode is useful in radio frequency detection and mixing. The interface layer may be one or more layers in thickness, and may also have a continuously graded AlGaSb layer with a varying Al concentration in order to enhance the nonlinear I-V curve characteristic near zero bias.

摘要翻译： 提出了包括由第一层InAs和第二层GaSb或InGaSb组成的异质结构的后向二极管，其中由锑化锑化合物组成的界面层。 还公开了在界面中AlSb的存在增强了接近零偏压的非线性电流 - 电压（I-V）曲线的非常期望的特性。 反向二极管可用于射频检测和混合。 界面层可以是一个或多个厚度的层，并且还可以具有具有变化的Al浓度的连续渐变的AlGaSb层，以便增强零偏压附近的非线性I-V曲线特性。