发明授权
- 专利标题： Semiconductor device and method of manufacturing thereof
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US12010935申请日： 2008-01-31
-
公开(公告)号： US07701004B2公开(公告)日： 2010-04-20
- 发明人: Kazutaka Akiyama
- 申请人： Kazutaka Akiyama
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-206370 20050715
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A first conductive layer and a second conductive layer are formed on an upper surface of a semiconductor substrate. The second conductive layer formed at a higher location than the first conductive layer. An insulating film is formed over the semiconductor substrate to cover the first conductive layer and the second conductive layer. An interlayer insulator has a structure of at least two layers including a first layered film composed of an organic insulating material and a second layered film composed of an inorganic insulating material and formed on the first layered film. The interlayer insulator is formed covering the first conductive layer and the second conductive layer.
公开/授权文献
- US20080211030A1 Semiconductor device and method of manufacturing thereof 公开/授权日：2008-09-04