发明授权
- 专利标题: Compound semiconductor device
- 专利标题(中): 复合半导体器件
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申请号: US11442600申请日: 2006-05-30
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公开(公告)号: US07701032B2公开(公告)日: 2010-04-20
- 发明人: Tetsuro Asano , Yuichi Kusaka , Mikito Sakakibara
- 申请人: Tetsuro Asano , Yuichi Kusaka , Mikito Sakakibara
- 申请人地址: JP Osaka
- 专利权人: SANYO Electric Co., Ltd.
- 当前专利权人: SANYO Electric Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Morrison & Foerster LLP
- 优先权: JP2005-158578 20050531
- 主分类号: H01L29/80
- IPC分类号: H01L29/80
摘要:
A separation element formed of one of a conduction region and a metal layer is placed between two elements in proximity to each other. The separation element is connected to a high resistance element and to a direct current terminal pad. A connection route extending from the direct current terminal pad to the separation element is a route in which a potential does not vibrate with high frequency. This results in a placement of a high frequency GND potential between the two elements, at least one of which is subjected to transmitting the high frequency signals, whereby leak of the high frequency signals can be prevented between the two elements.
公开/授权文献
- US20060289963A1 Compound semiconductor device 公开/授权日:2006-12-28