公开(公告)号：US07701032B2

公开(公告)日：2010-04-20

申请号：US11442600

申请日：2006-05-30

申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

IPC分类号： H01L29/80

CPC分类号： H01L27/0605 ,  H01L29/402 ,  H01L29/737 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812

摘要： A separation element formed of one of a conduction region and a metal layer is placed between two elements in proximity to each other. The separation element is connected to a high resistance element and to a direct current terminal pad. A connection route extending from the direct current terminal pad to the separation element is a route in which a potential does not vibrate with high frequency. This results in a placement of a high frequency GND potential between the two elements, at least one of which is subjected to transmitting the high frequency signals, whereby leak of the high frequency signals can be prevented between the two elements.

摘要翻译： 由导电区域和金属层之一形成的分离元件彼此靠近放置在两个元件之间。 分离元件连接到高电阻元件和直流端子焊盘。 从直流端子焊盘延伸到分离元件的连接路径是电位不以高频率振动的路径。 这导致在两个元件之间放置高频GND电位，其中至少一个被传送高频信号，从而可以防止两个元件之间的高频信号泄漏。

公开(公告)号：US07498616B2

公开(公告)日：2009-03-03

申请号：US11412113

申请日：2006-04-27

申请人： Tetsuro Asano ,  Mikito Sakakibara ,  Yuichi Kusaka ,  Hidetoshi Ishihara

发明人： Tetsuro Asano ,  Mikito Sakakibara ,  Yuichi Kusaka ,  Hidetoshi Ishihara

IPC分类号： H01L31/0328

CPC分类号： H01L29/7785 ,  H01L27/0605 ,  H03K17/693

摘要： A gate wiring electrode is formed into a ladder-like pattern. Moreover, between source electrodes and drain electrodes in the entire Switch MMIC, the gate wiring electrodes are disposed. Furthermore, at a cross part between the gate wiring electrode and the source electrode or the drain electrode, a nitride film having a large relative dielectric constant and a polyimide or a hollow part having a small relative dielectric constant are disposed. Accordingly, a capacitance at the cross part is reduced. Thus, a second harmonic wave level can be lowered. Moreover, a leak of a high-frequency signal between the drain electrode and the source electrode can be prevented. Thus, a third harmonic level can be lowered. Consequently, distortion characteristics of the Switch MMIC can be significantly improved.

摘要翻译： 栅极布线电极形成梯状图案。 此外，在整个开关MMIC中的源极和漏极之间设置栅极布线电极。 此外，在栅极配线电极与源电极或漏极之间的交叉部分设置相对介电常数大的氮化物膜和具有小的相对介电常数的聚酰亚胺或中空部。 因此，交叉部分的电容减小。 因此，可以降低二次谐波电平。 此外，可以防止漏极和源电极之间的高频信号的泄漏。 因此，可以降低三次谐波电平。 因此，可以显着提高开关MMIC的失真特性。

公开(公告)号：US07358788B2

公开(公告)日：2008-04-15

申请号：US11412077

申请日：2006-04-27

申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

IPC分类号： H03K5/08

CPC分类号： H01L29/7785 ,  H01L21/8252 ,  H01L27/0266 ,  H01L27/0605

摘要： Protecting elements are respectively connected between a control terminal Ctl and a ground terminal GND of a logic circuit L, between a point Cp and a ground terminal GND, and between a power supply terminal VDD and a ground terminal GND thereof. With this, an E-FET, constituting an inverter 70, and capacitors Ci and Cr can be protected from electrostatic breakdown due to external static electricity. Since the protecting element can be constituted by requisite components for the logic circuit, an additional step or structure is not especially required to provide the protecting element.

摘要翻译： 保护元件分别连接在控制端子Ct1和逻辑电路L的接地端子GND之间，位于点Cp和接地端子GND之间，以及电源端子V DD端子和接地端子 GND。 由此，可以防止构成反相器70的电子FET，电容器Ci，Cr由于外部静电而受到静电破坏。 由于保护元件可以由用于逻辑电路的必需部件构成，所以不需要额外的步骤或结构来提供保护元件。

公开(公告)号：US20060289963A1

公开(公告)日：2006-12-28

申请号：US11442600

申请日：2006-05-30

申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

IPC分类号： H01L29/00

CPC分类号： H01L27/0605 ,  H01L29/402 ,  H01L29/737 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812

摘要： A separation element formed of one of a conduction region and a metal layer is placed between two elements in proximity to each other. The separation element is connected to a high resistance element and to a direct current terminal pad. A connection route extending from the direct current terminal pad to the separation element is a route in which a potential does not vibrate with high frequency. This results in a placement of a high frequency GND potential between the two elements, at least one of which is subjected to transmitting the high frequency signals, whereby leak of the high frequency signals can be prevented between the two elements.

摘要翻译： 由导电区域和金属层之一形成的分离元件彼此靠近放置在两个元件之间。 分离元件连接到高电阻元件和直流端子焊盘。 从直流端子焊盘延伸到分离元件的连接路径是电位不以高频率振动的路径。 这导致在两个元件之间放置高频GND电位，其中至少一个被传送高频信号，从而可以防止两个元件之间的高频信号泄漏。

公开(公告)号：US20060252651A1

公开(公告)日：2006-11-09

申请号：US11412077

申请日：2006-04-27

申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

IPC分类号： H01L39/00

CPC分类号： H01L29/7785 ,  H01L21/8252 ,  H01L27/0266 ,  H01L27/0605

摘要： Protecting elements are respectively connected between a control terminal Ctl and a ground terminal GND of a logic circuit L, between a point Cp and a ground terminal GND, and between a power supply terminal VDD and a ground terminal GND thereof. With this, an E-FET, constituting an inverter 70, and capacitors Ci and Cr can be protected from electrostatic breakdown due to external static electricity. Since the protecting element can be constituted by requisite components for the logic circuit, an additional step or structure is not especially required to provide the protecting element.

摘要翻译： 保护元件分别连接在控制端子Ct1和逻辑电路L的接地端子GND之间，位于点Cp和接地端子GND之间，以及电源端子V DD端子和接地端子 GND。 由此，可以防止构成反相器70的电子FET，电容器Ci，Cr由于外部静电而受到静电破坏。 由于保护元件可以由用于逻辑电路的必需部件构成，所以不需要额外的步骤或结构来提供保护元件。

公开(公告)号：US20060255403A1

公开(公告)日：2006-11-16

申请号：US11412113

申请日：2006-04-27

申请人： Tetsuro Asano ,  Mikito Sakakibara ,  Yuichi Kusaka ,  Hidetoshi Ishihara

发明人： Tetsuro Asano ,  Mikito Sakakibara ,  Yuichi Kusaka ,  Hidetoshi Ishihara

IPC分类号： H01L29/76

CPC分类号： H01L29/7785 ,  H01L27/0605 ,  H03K17/693

摘要： A gate wiring electrode is formed into a ladder-like pattern. Moreover, between source electrodes and drain electrodes in the entire Switch MMIC, the gate wiring electrodes are disposed. Furthermore, at a cross part between the gate wiring electrode and the source electrode or the drain electrode, a nitride film having a large relative dielectric constant and a polyimide or a hollow part having a small relative dielectric constant are disposed. Accordingly, a capacitance at the cross part is reduced. Thus, a second harmonic wave level can be lowered. Moreover, a leak of a high-frequency signal between the drain electrode and the source electrode can be prevented. Thus, a third harmonic level can be lowered. Consequently, distortion characteristics of the Switch MMIC can be significantly improved.

公开(公告)号：US07262470B2

公开(公告)日：2007-08-28

申请号：US10772585

申请日：2004-02-06

申请人： Tetsuro Asano ,  Mikito Sakakibara ,  Toshikazu Hiraj

发明人： Tetsuro Asano ,  Mikito Sakakibara ,  Toshikazu Hiraj

IPC分类号： H01L21/00

CPC分类号： H01L27/0288 ,  H01L24/05 ,  H01L29/812 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13055 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/00

摘要： With a microwave FET, the internalized Schottky junction capacitance or pn junction capacitance is small and these junctions are weak against static electricity. However, with a microwave device, a protecting diode could not be connected since the increase of parasitic capacitance resulting from this method causes degradation of the high frequency characteristics. Therefore, to eliminate this problem, a semiconductor device is provided, wherein two paths, extending from a gate electrode pad to a gate electrode on an operating region, are arranged, with one path running near a source electrode pad, the other path running near a drain electrode pad, and at the respective parts where a path becomes close to a pad, the abovementioned protecting elements are connected between the gate electrode and source electrode and between the gate electrode and drain electrode to improve the electrostatic breakdown voltage of the FET from approximately 100V to 700V.

摘要翻译： 使用微波FET，内部肖特基结电容或pn结电容小，这些结对静电弱。 然而，使用微波装置，由于由该方法产生的寄生电容的增加导致高频特性的劣化，所以不能连接保护二极管。 因此，为了消除这个问题，提供一种半导体器件，其中从栅电极焊盘延伸到工作区域上的栅电极的两条路径布置成一条路径在源电极焊盘附近运行，另一条路径靠近 漏极电极焊盘，并且在路径变得靠近焊盘的各个部分处，上述保护元件连接在栅电极和源电极之间以及栅电极和漏电极之间，以提高FET的静电击穿电压 约100V至700V。

公开(公告)号：US20060163659A1

公开(公告)日：2006-07-27

申请号：US11314178

申请日：2005-12-22

申请人： Tetsuro Asano ,  Mikito Sakakibara

发明人： Tetsuro Asano ,  Mikito Sakakibara

IPC分类号： H01L23/62

CPC分类号： H01L27/0605 ,  H01L27/0251

摘要： A high-resistance element is connected as a part of a control resistor between a control terminal pad and a protecting element, immediately near the control terminal pad. Thus, even if a high-frequency analog signal leaks to the control resistor, the leaked signal is attenuated by the high-resistance element. This substantially eliminates the possibility of the high-frequency analog signal transmitting to the control terminal pad. Accordingly, an increase in insertion loss can be suppressed.

公开(公告)号：US20060163609A1

公开(公告)日：2006-07-27

申请号：US11314804

申请日：2005-12-22

申请人： Tetsuro Asano ,  Mikito Sakakibara

发明人： Tetsuro Asano ,  Mikito Sakakibara

IPC分类号： H01L31/0328

CPC分类号： H01L29/7783 ,  H01L29/812 ,  H03K17/007 ,  H03K17/693

摘要： High resistance elements of 5 KΩ or more are connected near first and second control terminals between the first and second control terminals and respective crossing portion of first and second connectings. Even when a high frequency analog signal transmitted in a pad wire leaks to the first and second connectings, the high frequency analog signal is attenuated by the high resistance elements. Accordingly, the high frequency analog signal is not substantially transmitted to control terminal pads. It is therefore possible to suppress an increase in insertion loss.

摘要翻译： 5KΩ以上的高电阻元件连接在第一和第二控制端子之间的第一和第二控制端子附近以及第一和第二连接的相应交叉部分附近。 即使当在焊盘线中传输的高频模拟信号泄漏到第一和第二连接时，高频模拟信号被高电阻元件衰减。 因此，高频模拟信号基本上不传输到控制端子焊盘。 因此可以抑制插入损耗的增加。

公开(公告)号：US06946891B2

公开(公告)日：2005-09-20

申请号：US10781941

申请日：2004-02-20

申请人： Tetsuro Asano ,  Mikito Sakakibara ,  Toshikazu Hirai

发明人： Tetsuro Asano ,  Mikito Sakakibara ,  Toshikazu Hirai

IPC分类号： H01L27/04 ,  H01L21/06 ,  H01L21/338 ,  H01L21/66 ,  H01L21/822 ,  H01L21/8232 ,  H01L27/02 ,  H01L27/06 ,  H01L29/80 ,  H01L29/812 ,  H02H9/00 ,  H03K5/08 ,  H03K17/00 ,  H03K17/16 ,  H03K17/693

CPC分类号： H01L27/0288 ,  B82Y30/00 ,  H01L51/426 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2924/12032 ,  H01L2924/00

摘要： Since improvement measures are not taken in regard to the electrostatic breakdown voltage, electrostatic breakdown voltages, between the common input terminal IN—first control terminal Ctl-1, between the common input terminal IN—second control terminal Ctl-2, between the first control terminal Ctl-1—the first output terminal OUT1, and between the second control terminal Ctl-2—the second output terminal OUT2, where both ends of gate Schottky junctions of FETs are lead out to the exterior, are low. To solve the problem, the embodiment of the invention provides a switch circuit device, wherein protecting elements are connected by disposing two electrode pads, for connection to a single control terminal, on a chip and positioning the electrode pads near the common input terminal pad I and an output terminal pad O1 or O2. The electrostatic energies that are applied between the first output terminal OUT1—the first control terminal Ctl-1, between the common input terminal IN—the first control terminal Ctl-1, between the second output terminal OUT2—the second control terminal Ctl-2, and between the common input terminal IN—the second control terminal Ctl-2 can be respectively attenuated to the same degree and most efficiently.

摘要翻译： 由于在公共输入端子IN-first控制端子Ct1-1之间的公共输入端子IN-第二控制端子Ctl-2之间的静电击穿电压，静电击穿电压之间的静电击穿电压不在第一控制 端子Ctl-1-第一输出端子OUT 1和第二控制端子Ct1-2-第二输出端子OUT2之间的第二输出端子OUT 2，其中FET的栅极肖特基结的两端都被引出到外部。 为了解决这个问题，本发明的实施例提供一种开关电路装置，其中保护元件通过在芯片上设置用于连接到单个控制端子的两个电极焊盘连接，并将电极焊盘定位在公共输入端子焊盘I附近 和输出端子焊盘O 1或O 2。 施加在第一输出端子OUT 1之间的第一控制端子Ct1-1之间的公共输入端子IN-第一控制端子Ct1-1之间的第二输出端子OUT 2之间的静电能量 - 第二控制端子Ct1 -2，并且在公共输入端子IN-第二控制端子Ct1-2之间可以分别以相同的程度和最有效地衰减。