Invention Grant
US07705328B2 Broad ribbon beam ion implanter architecture with high mass-energy capability
有权
具有高质量能量能力的宽带束离子注入架构
- Patent Title: Broad ribbon beam ion implanter architecture with high mass-energy capability
- Patent Title (中): 具有高质量能量能力的宽带束离子注入架构
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Application No.: US11932117Application Date: 2007-10-31
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Publication No.: US07705328B2Publication Date: 2010-04-27
- Inventor: Shu Satoh , Manny Sieradzki
- Applicant: Shu Satoh , Manny Sieradzki
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies, Inc.
- Current Assignee: Axcelis Technologies, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Eschweiler & Associates, LLC
- Main IPC: G21K5/10
- IPC: G21K5/10 ; H01J37/08

Abstract:
A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).
Public/Granted literature
- US20090108198A1 BROAD RIBBON BEAM ION IMPLANTER ARCHITECTURE WITH HIGH MASS-ENERGY CAPABILITY Public/Granted day:2009-04-30
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