发明授权
US07706168B2 Erase, programming and leakage characteristics of a resistive memory device
有权
电阻式存储器件的擦除，编程和漏电特性
- 专利标题： Erase, programming and leakage characteristics of a resistive memory device
- 专利标题（中）： 电阻式存储器件的擦除，编程和漏电特性
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申请号： US11980116申请日： 2007-10-30
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公开(公告)号： US07706168B2公开(公告)日： 2010-04-27
- 发明人: Tzu-Ning Fang , Steven Avanzino , Swaroop Kaza , Dongxiang Liao , Christie Marrian , Sameer Haddad
- 申请人： Tzu-Ning Fang , Steven Avanzino , Swaroop Kaza , Dongxiang Liao , Christie Marrian , Sameer Haddad
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
The present method provides annealing of a resistive memory device so as to provide that the device in its erased state has a greatly increased resistance as compared to a prior art approach. The annealing also provides that the device may be erased by application of any of a plurality of electrical potentials within an increased range of electrical potentials as compared to the prior art.
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