发明授权
- 专利标题： CMOS well structure and method of forming the same
- 专利标题（中）： CMOS阱结构及其形成方法
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申请号： US11551959申请日： 2006-10-23
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公开(公告)号： US07709365B2公开(公告)日： 2010-05-04
- 发明人: Wilfried Haensch , Terence B. Hook , Louis C. Hsu , Rajiv V. Joshi , Werner Rausch
- 申请人： Wilfried Haensch , Terence B. Hook , Louis C. Hsu , Rajiv V. Joshi , Werner Rausch
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L21/38
摘要：
A method for forming a CMOS well structure including forming a plurality of first conductivity type wells over a substrate, each of the plurality of first conductivity type wells formed in a respective opening in a first mask. A cap is formed over each of the first conductivity type wells, and the first mask is removed. Sidewall spacers are formed on sidewalls of each of the first conductivity type wells. A plurality of second conductivity type wells are formed, each of the plurality of second conductivity type wells are formed between respective first conductivity type wells. A plurality of shallow trench isolations are formed between the first conductivity type wells and second conductive type wells. The plurality of first conductivity type wells are formed by a first selective epitaxial growth process, and the plurality of second conductivity type wells are formed by a second selective epitaxial growth process.
公开/授权文献
- US20070045749A1 CMOS WELL STRUCTURE AND METHOD OF FORMING THE SAME 公开/授权日：2007-03-01
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