摘要:
A method for forming a CMOS well structure including forming a plurality of first conductivity type wells over a substrate, each of the plurality of first conductivity type wells formed in a respective opening in a first mask. A cap is formed over each of the first conductivity type wells, and the first mask is removed. Sidewall spacers are formed on sidewalls of each of the first conductivity type wells. A plurality of second conductivity type wells are formed, each of the plurality of second conductivity type wells are formed between respective first conductivity type wells. A plurality of shallow trench isolations are formed between the first conductivity type wells and second conductive type wells. The plurality of first conductivity type wells are formed by a first selective epitaxial growth process, and the plurality of second conductivity type wells are formed by a second selective epitaxial growth process.
摘要:
A method for forming a CMOS well structure including forming a plurality of first conductivity type wells over a substrate, each of the plurality of first conductivity type wells formed in a respective opening in a first mask. A cap is formed over each of the first conductivity type wells, and the first mask is removed. Sidewall spacers are formed on sidewalls of each of the first conductivity type wells. A plurality of second conductivity type wells are formed, each of the plurality of second conductivity type wells are formed between respective first conductivity type wells. A plurality of shallow trench isolations are formed between the first conductivity type wells and second conductive type wells. The plurality of first conductivity type wells are formed by a first selective epitaxial growth process, and the plurality of second conductivity type wells are formed by a second selective epitaxial growth process.
摘要:
A T-RAM array having a planar cell structure is presented. The T-RAM array includes n-MOS and p-MOS support devices which are fabricated by sharing process implant steps with T-RAM cells of the T-RAM array. A method is also presented for fabricating the T-RAM array having the planar cell structure. The method entails simultaneously fabricating a first portion of a T-RAM cell and the n-MOS support device; simultaneously fabricating a second portion of the T-RAM cell and the p-MOS support device; and finishing the fabrication of the T-RAM cell by interconnecting the T-RAM cell with the p-MOS and n-MOS support devices. The first portion of the T-RAM cell is a transfer gate and the second portion of the T-RAM cell is a gated-lateral thyristor storage element. Accordingly, process steps in fabricating the T-RAM cells are shared with process steps in fabricating the n-MOS and p-MOS support devices. The n-MOS and p-MOS support devices refer to sense amplifiers, wordline drivers, column and row decoders, etc. which are connected to the T-RAM array.
摘要:
A method for forming a CMOS well structure including forming a plurality of first conductivity type wells over a substrate, each of the plurality of first conductivity type wells formed in a respective opening in a first mask. A cap is formed over each of the first conductivity type wells, and the first mask is removed. Sidewall spacers are formed on sidewalls of each of the first conductivity type wells. A plurality of second conductivity type wells are formed, each of the plurality of second conductivity type wells are formed between respective first conductivity type wells. A plurality of shallow trench isolations are formed between the first conductivity type wells and second conductive type wells. The plurality of first conductivity type wells are formed by a first selective epitaxial growth process, and the plurality of second conductivity type wells are formed by a second selective epitaxial growth process.
摘要:
A method for forming a CMOS well structure including forming a plurality of first conductivity type wells over a substrate, each of the plurality of first conductivity type wells formed in a respective opening in a first mask. A cap is formed over each of the first conductivity type wells, and the first mask is removed. Sidewall spacers are formed on sidewalls of each of the first conductivity type wells. A plurality of second conductivity type wells are formed, each of the plurality of second conductivity type wells are formed between respective first conductivity type wells. A plurality of shallow trench isolations are formed between the first conductivity type wells and second conductive type wells. The plurality of first conductivity type wells are formed by a first selective epitaxial growth process, and the plurality of second conductivity type wells are formed by a second selective epitaxial growth process.
摘要:
A silicon containing fin is formed on a semiconductor substrate. A silicon oxide layer is formed around the bottom of the silicon containing fin. A gate dielectric is formed on the silicon containing fin followed by formation of a gate electrode. While protecting the portion of the semiconductor fin around the channel, a bottom portion of the silicon containing semiconductor fin is etched by a isotropic etch leaving a body strap between the channel of a finFET on the silicon containing fin and an underlying semiconductor layer underneath the silicon oxide layer. The fin may comprise a stack of inhomogeneous layers in which a bottom layer is etched selectively to a top semiconductor layer. Alternatively, the fin may comprise a homogeneous semiconductor material and the silicon containing fin may be protected by dielectric films on the sidewalls and top surfaces of the silicon containing fin.
摘要:
The present invention relates to complementary metal-oxide-semiconductor (CMOS) circuits, as well as methods for forming such CMOS circuits. More specifically, the present invention relates to CMOS circuits that contain passive elements, such as buried resistors, capacitors, diodes, inductors, attenuators, power dividers, and antennas, etc., which are characterized by an end contact resistance of less than 90 ohm-microns. Such a low end resistance can be achieved either by reducing the spacer widths of the passive elements to a range of from about 10 nm to about 30 nm, or by masking the passive elements during a pre-amorphization implantation step, so that the passive elements are essentially free of pre-amorphization implants.
摘要:
A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.
摘要:
A field effect transistor (“FET”) is provided which includes a gate stack overlying a single-crystal semiconductor region of a substrate, a pair of first spacers disposed over sidewalls of said gate stack, and a pair of regions consisting essentially of a single-crystal semiconductor alloy which are disposed on opposite sides of the gate stack. Each of the semiconductor alloy regions is spaced a first distance from the gate stack. The source region and drain region of the FET are at least partly disposed in respective ones of the semiconductor alloy regions, such that the source region and the drain region are each spaced a second distance from the gate stack by a first spacer of the pair of first spacers, the second distance being different from the first distance.
摘要:
A method is provided for forming an SOI MOSFET device with a silicon layer formed on a dielectric layer with a gate electrode stack, with sidewall spacers on sidewalls of the gate electrode stack and raised source/drain regions formed on the surface of the silicon layer. The gate electrode stack comprises a gate electrode formed of polysilicon over a gate dielectric layer formed on the surface of the silicon layer. A plug of dielectric material is formed in a notch in a cap layer above the gate polysilicon. The sidewalls of the gate electrode is covered by the sidewall spacers which cover a portion of the plug for the purpose of eliminating the exposure of the gate polysilicon so that formation of spurious epitaxial growth during the formation of raised source/drain regions is avoided.