发明授权
US07713380B2 Method and apparatus for backside polymer reduction in dry-etch process
有权
用于干蚀刻工艺中背面聚合物还原的方法和装置
- 专利标题： Method and apparatus for backside polymer reduction in dry-etch process
- 专利标题（中）： 用于干蚀刻工艺中背面聚合物还原的方法和装置
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申请号： US10765808申请日： 2004-01-27
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公开(公告)号： US07713380B2公开(公告)日： 2010-05-11
- 发明人: Huang-Ming Chen , Chun-Li Chou , Chao-Cheng Chen , Hun-Jan Tao
- 申请人： Huang-Ming Chen , Chun-Li Chou , Chao-Cheng Chen , Hun-Jan Tao
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW
- 代理机构： Duane Morris LLP
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; B23B31/28 ; H01L21/683
摘要：
A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.
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