发明授权
- 专利标题： Methods for thinning semiconductor substrates that employ support structures formed on the substrates
- 专利标题（中）： 减薄采用在基板上形成的支撑结构的半导体衬底的方法
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申请号： US10666742申请日： 2003-09-19
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公开(公告)号： US07713841B2公开(公告)日： 2010-05-11
- 发明人: Alan G. Wood , Warren M. Farnworth , David R. Hembree , Sidney B. Rigg , William M. Hiatt , Peter Benson , Kyle K. Kirby , Salman Akram
- 申请人： Alan G. Wood , Warren M. Farnworth , David R. Hembree , Sidney B. Rigg , William M. Hiatt , Peter Benson , Kyle K. Kirby , Salman Akram
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L21/46
- IPC分类号： H01L21/46
摘要：
A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface. Assemblies that include the support structure and a semiconductor substrate are also within the scope of the present invention, as are methods for forming the support structures and thinning and post-thinning processes that include use of the support structures.
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