公开(公告)号：US07713841B2

公开(公告)日：2010-05-11

申请号：US10666742

申请日：2003-09-19

申请人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

发明人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

IPC分类号： H01L21/46

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface. Assemblies that include the support structure and a semiconductor substrate are also within the scope of the present invention, as are methods for forming the support structures and thinning and post-thinning processes that include use of the support structures.

摘要翻译： 在半导体衬底的薄化或后研磨以及后稀化处理期间与半导体衬底一起使用的支撑结构包括基本上沿半导体衬底的外周延伸并且围绕半导体衬底的外周延伸的部分，以使薄化半导体 基板具有刚性。 支撑结构可以被配置为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。 包括支撑结构和半导体衬底的组件也在本发明的范围内，形成支撑结构的方法和包括使用支撑结构的减薄和后变薄工艺也是如此。

公开(公告)号：US07960829B2

公开(公告)日：2011-06-14

申请号：US11216617

申请日：2005-08-31

申请人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

发明人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

IPC分类号： H01L23/12

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion that extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member that substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface.

摘要翻译： 用于半导体衬底的减薄或后研磨以及在半导体衬底的后变薄处理期间的支撑结构包括基本上沿着半导体衬底的外周延伸并围绕半导体衬底的外周延伸的部分，以使半导体衬底 基板具有刚性。 支撑结构可以被构造为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。

公开(公告)号：US20070170350A1

公开(公告)日：2007-07-26

申请号：US11727545

申请日：2007-03-27

申请人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Alan Wood ,  Peter Benson ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Charles Watkins ,  Salman Akram

发明人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Alan Wood ,  Peter Benson ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Charles Watkins ,  Salman Akram

IPC分类号： H01L27/00

CPC分类号： H01L27/00 ,  B33Y80/00 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L27/14687 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/00014

摘要： Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.

公开(公告)号：US20060243889A1

公开(公告)日：2006-11-02

申请号：US11476015

申请日：2006-06-28

申请人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Alan Wood ,  Peter Benson ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Charles Watkins ,  Salman Akram

发明人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Alan Wood ,  Peter Benson ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Charles Watkins ,  Salman Akram

IPC分类号： H01L27/00

CPC分类号： H01L27/00 ,  B33Y80/00 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14683 ,  H01L27/14687 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/00014

摘要： Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.

公开(公告)号：US20060261340A1

公开(公告)日：2006-11-23

申请号：US11494453

申请日：2006-07-28

申请人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

发明人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

IPC分类号： H01L29/04 ,  H01L33/00 ,  H01L29/768 ,  H01L27/148 ,  H01L31/0203

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/48 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the die and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad with conductive fill material at least partially disposed in the passage. An electrically conductive support member is carried by and projects from the bond-pad. A cover over the image sensor is coupled to the support member.

摘要翻译： 本文公开了微电子成像器和用于封装微电子成像器的方法。 在一个实施例中，微电子成像单元可以包括微电子管芯，图像传感器，电耦合到图像传感器的集成电路以及电耦合到集成电路的接合焊盘。 导电晶片互连延伸穿过管芯并且与焊盘接触。 互连可以包括完全延伸穿过基底的通道和具有至少部分地设置在通道中的导电填充材料的接合垫。 导电支撑构件由接合垫承载和突出。 图像传感器上的盖连接到支撑构件。

公开(公告)号：US20060043569A1

公开(公告)日：2006-03-02

申请号：US11129105

申请日：2005-05-13

申请人： Peter Benson ,  Salman Akram

发明人： Peter Benson ,  Salman Akram

IPC分类号： H01L23/04 ,  H01L29/40

CPC分类号： H01L21/76898 ,  B33Y80/00 ,  H01L23/481 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02327 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

摘要翻译： 公开了低温处理后侧再分配线（RDL）。 低温处理的背面RDL可以通过晶片互连（TWI）与半导体衬底的有源表面器件电连接。 TWI可以在形成RDL之后，在形成RDL之后形成，或者基本上同时形成以形成RDL。 用于背面RDL和各种其它相关材料（例如电介质和导电通孔填充材料）的材料在足够低的温度下进行处理，以便不损坏包含在半导体衬底的有源表面上的半导体器件或相关组件。 本发明的低温处理背面RDL可以用于光学交互式半导体器件和半导体存储器件等等。 采用本发明的RDL的半导体器件可以堆叠并且电连接在一起。

公开(公告)号：US20050275048A1

公开(公告)日：2005-12-15

申请号：US10867352

申请日：2004-06-14

申请人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

发明人： Warren Farnworth ,  Sidney Rigg ,  William Hiatt ,  Kyle Kirby ,  Peter Benson ,  James Wark ,  Alan Wood ,  David Hembree ,  Salman Akram ,  Charles Watkins

IPC分类号： H01L21/00 ,  H01L23/02 ,  H01L23/48 ,  H01L27/14 ,  H01L27/146 ,  H01L31/00 ,  H01L31/0203 ,  H01L31/0232

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/48 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the die and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad with conductive fill material at least partially disposed in the passage. An electrically conductive support member is carried by and projects from the bond-pad. A cover over the image sensor is coupled to the support member.

摘要翻译： 本文公开了微电子成像器和用于封装微电子成像器的方法。 在一个实施例中，微电子成像单元可以包括微电子管芯，图像传感器，电耦合到图像传感器的集成电路以及电耦合到集成电路的接合焊盘。 导电晶片互连延伸穿过管芯并且与焊盘接触。 互连可以包括完全延伸穿过基底的通道和具有至少部分地设置在通道中的导电填充材料的接合垫。 导电支撑构件由接合垫承载和突出。 图像传感器上的盖连接到支撑构件。

公开(公告)号：US20070259517A1

公开(公告)日：2007-11-08

申请号：US11777797

申请日：2007-07-13

申请人： Peter Benson ,  Salman Akram

发明人： Peter Benson ,  Salman Akram

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  B33Y80/00 ,  H01L23/481 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02327 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

摘要翻译： 公开了低温处理后侧再分配线（RDL）。 低温处理的背面RDL可以通过晶片互连（TWI）与半导体衬底的有源表面器件电连接。 TWI可以在形成RDL之后，在形成RDL之后形成，或者基本上同时形成以形成RDL。 用于背面RDL和各种其它相关材料（例如电介质和导电通孔填充材料）的材料在足够低的温度下进行处理，以便不损坏包含在半导体衬底的有源表面上的半导体器件或相关组件。 本发明的低温处理背面RDL可以用于光学交互式半导体器件和半导体存储器件等等。 采用本发明的RDL的半导体器件可以堆叠并且电连接在一起。

公开(公告)号：US20060043509A1

公开(公告)日：2006-03-02

申请号：US10925502

申请日：2004-08-24

申请人： Charles Watkins ,  David Hembree ,  Peter Benson ,  Salman Akram

发明人： Charles Watkins ,  David Hembree ,  Peter Benson ,  Salman Akram

IPC分类号： H01L21/00 ,  H01L27/14 ,  H01L31/0232

CPC分类号： H01L27/14625 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L31/0203 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： Microelectronic imaging devices and methods of packaging microelectronic imaging devices are disclosed herein. In one embodiment, a microelectronic imaging device includes a microelectronic die having an integrated circuit, an image sensor electrically coupled to the integrated circuit, and a plurality of bond-pads electrically coupled to the integrated circuit. The imaging device further includes a cover over the image sensor and a plurality of interconnects in and/or on the cover that are electrically coupled to corresponding bond-pads of the die. The interconnects provide external electrical contacts for the bond-pads of the die. The interconnects can extend through the cover or along a surface of the cover.

公开(公告)号：US20060008739A1

公开(公告)日：2006-01-12

申请号：US11216938

申请日：2005-08-31

申请人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

发明人： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

IPC分类号： G03C1/00

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： Materials for use in programmed material consolidation processes, such as stereolithography, include a selectively consolidatable material and a filler. The filler may be included to optimize one or more physical properties of the material. The material is both selectively consolidatable and includes the desired physical property. Examples of physical properties that may optimized in a selectively consolidatable compound by mixing a filler material with a selectively consolidatable material include, without limitation, coefficient of thermal expansion, rigidity, fracture toughness, thermal stability, and strength.

摘要翻译： 用于程序化材料固结方法（例如立体光刻）的材料包括可选择的可固结材料和填料。 可以包括填料以优化材料的一种或多种物理性质。 该材料既可选择性地整合，并且包括所需的物理性质。 通过将填充材料与可选择性地可固结的材料混合可以在可选择地可固化的化合物中优化的物理性质的实例包括但不限于热膨胀系数，刚性，断裂韧性，热稳定性和强度。