发明授权
- 专利标题: Method for manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12130296申请日: 2008-05-30
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公开(公告)号: US07718497B2公开(公告)日: 2010-05-18
- 发明人: Yasushi Akasaka , Noriaki Fukiage , Yoshihiro Kato , Kazuhide Hasebe , Pao-Hwa Chou
- 申请人: Yasushi Akasaka , Noriaki Fukiage , Yoshihiro Kato , Kazuhide Hasebe , Pao-Hwa Chou
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Pearne & Gordon LLP
- 优先权: JP2007-145646 20070531
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
A semiconductor device manufacturing method includes: forming a sidewall spacer on a sidewall surface of a gate electrode; forming a pair of second conductive type source and drain regions in an active region; covering top surfaces of a semiconductor layer, a device isolation region, the sidewall spacer and the gate electrode with a metal film; reducing resistance of the source and drain regions and the gate electrode partially by making the metal film react with the semiconductor layer and the gate electrode; and removing an unreacted portion of the metal film and the sidewall spacer simultaneously by using an etchant which readily etches the unreacted portion of the metal film and the sidewall spacer while hardly etching the device isolation region, resistance-reduced portions of the gate electrode and resistance-reduced portions of the source and drain regions.
公开/授权文献
- US20080299728A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2008-12-04