公开(公告)号：US20100086681A1

公开(公告)日：2010-04-08

申请号：US12530028

申请日：2008-02-27

申请人： Hiroyuki Ikuta ,  Noriaki Fukiage

发明人： Hiroyuki Ikuta ,  Noriaki Fukiage

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C14/545 ,  C23C14/228 ,  C23C14/246 ,  C23C14/56 ,  H01L51/001

摘要： Provided is a control device of an evaporating apparatus performing a film forming process on a substrate with a film forming material evaporated from a vapor deposition source, and a storage of the control device stores a plurality of tables each showing a relationship between a deposition rate and a flow rate of a carrier gas. A table selection unit selects a desired table from the plurality of tables stored in the storage based on a processing condition. A deposition controller calculates a deposition rate based on a signal outputted from a QCM. A carrier gas controller controls the flow rate of the carrier gas to obtain a desired deposition rate based on a difference between a target deposition rate and the deposition rate obtained by the deposition controller, with reference to data indicating the relationship between the deposition rate and the flow rate of the carrier gas.

摘要翻译： 本发明提供一种蒸发装置的控制装置，该蒸发装置利用从蒸镀源蒸发的成膜材料在基板上进行成膜处理，并且，控制装置的存储部存储多个表，其各自表示沉积速率和 载气的流量。 表选择单元基于处理条件从存储在存储器中的多个表中选择所需表。 沉积控制器基于从QCM输出的信号计算沉积速率。 参考表示沉积速率和沉积速率之间的关系的数据，载气控制器基于目标沉积速率和由沉积控制器获得的沉积速率之间的差异来控制载气的流速以获得期望的沉积速率 载气流量。

公开(公告)号：US07611758B2

公开(公告)日：2009-11-03

申请号：US10702049

申请日：2003-11-06

申请人： Noriaki Fukiage ,  Katherina Babich

发明人： Noriaki Fukiage ,  Katherina Babich

IPC分类号： H05H1/24

CPC分类号： C23C16/56 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/5096 ,  G03F7/091 ,  H01J2237/3321

摘要： A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing the TERA film using a plasma process. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple precursors and process gasses.

摘要翻译： 一种用于改善沉积的介电膜上的显影后光刻胶轮廓的方法和装置。 该方法包括使用等离子体增强化学气相沉积工艺在衬底上沉积具有可调光学和耐蚀刻特性的TERA膜，并使用等离子体工艺对TERA膜进行后处理。 所述装置包括具有耦合到第一RF源的上电极和耦合到第二RF源的衬底保持器的腔室; 以及用于提供多种前体和工艺气体的喷头。

公开(公告)号：US20070128876A1

公开(公告)日：2007-06-07

申请号：US11292293

申请日：2005-12-02

申请人： Noriaki Fukiage

发明人： Noriaki Fukiage

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/3244

摘要： An apparatus and method for improving the chamber dry cleaning of a PECVD system. The apparatus includes an annular gas ring with multiple outlets for introducing a cleaning gas into the process chamber, and the method includes using the gas ring to introduce a cleaning species from a remote plasma source into the processing chamber.

摘要翻译： 一种用于改进PECVD系统的室干洗的设备和方法。 该装置包括具有用于将清洁气体引入处理室的多个出口的环形气环，并且该方法包括使用气环将清洁物质从远程等离子体源引入到处理室中。

公开(公告)号：US20050039681A1

公开(公告)日：2005-02-24

申请号：US10644958

申请日：2003-08-21

申请人： Noriaki Fukiage

发明人： Noriaki Fukiage

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01L21/027 ,  H05H1/24

CPC分类号： C23C16/45565 ,  C23C16/4411 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/5096 ,  H01L21/0276

摘要： A method and system for depositing a film with tunable optical and etch resistant properties on a substrate by plasma-enhanced chemical vapor deposition. A chamber has a plasma source and a substrate holder coupled to a RF source. A substrate is placed on the substrate holder. The TERA layer is deposited on the substrate. The amount of RF power provided by the RF source is selected such that the rate of deposition of at least one portion of the TERA layer is greater than when no RF power is applied the substrate holder.

摘要翻译： 一种用于通过等离子体增强化学气相沉积在衬底上沉积具有可调光学和耐蚀刻性质的膜的方法和系统。 腔室具有耦合到RF源的等离子体源和衬底保持器。 将衬底放置在衬底保持器上。 TERA层沉积在基底上。 选择由RF源提供的RF功率的量，使得TERA层的至少一部分的沉积速率大于不施加RF功率时的衬底保持器的沉积速率。

公开(公告)号：US06773762B1

公开(公告)日：2004-08-10

申请号：US09573418

申请日：2000-05-18

申请人： Noriaki Fukiage

发明人： Noriaki Fukiage

IPC分类号： C23C1458

CPC分类号： C23C16/56 ,  C23C16/30 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829

摘要： In a case where a CF film is used as an interlayer dielectric film of a semiconductor device, when a wiring of tungsten is formed, the CF film is heated to a temperature of, e.g., about 400 to 450° C. At this time, F gases are desorbed from the CF film, so that there are various disadvantages due to the corrosion of the wiring and the decrease of film thickness. In order to prevent this, thermostability is enhanced. A compound gas of C and F, e.g., C4F8 gas, and a hydrocarbon gas, e.g., C2H4 gas, are used as thin film deposition gases. These gases are activated as plasma to deposit a CF film on a semiconductor wafer 10 using active species thereof. Then, Ar gas serving as a sputtering gas is introduced to be activated as plasma, and the CF film deposited on the wafer 10 is sputtered with the Ar plasma. If the thin-film deposition process and the sputtering process are alternately repeated, weak bonds existing in the CF film are removed by sputtering. Therefore, the bonds are strengthen and difficult to be cut even at a high temperature, so that thermostability is improved.

摘要翻译： 在使用CF膜作为半导体器件的层间电介质膜的情况下，当形成钨的布线时，将CF膜加热至例如约400〜450℃的温度。此时， F气体从CF膜中解吸，由于布线的腐蚀和膜厚度的降低，存在各种缺点。 为了防止这种情况，热稳定性提高。将C和F的复合气体例如C 4 F 8气体和烃气体例如C 2 H 4气体用作薄膜沉积气体。 这些气体被激活为等离子体，以使用其活性物质在半导体晶片10上沉积CF膜。 然后，引入用作溅射气体的Ar气体作为等离子体激活，并且用Ar等离子体溅射沉积在晶片10上的CF膜。 如果交替重复薄膜沉积工艺和溅射工艺，则通过溅射除去存在于CF膜中的弱键。 因此，即使在高温下，粘结也增强，难以切断，从而提高了热稳定性。

公开(公告)号：US20100175713A1

公开(公告)日：2010-07-15

申请号：US12528734

申请日：2008-02-18

申请人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

发明人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

IPC分类号： B08B7/00 ,  C23F1/08

CPC分类号： C23C16/52 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32862

摘要： A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

摘要翻译： 一种清洗等离子体处理装置，用于使用等离子体进行真空抽真空处理的处理容器中的目标物的方法包括：通过向处理容器提供清洁气体以产生等离子体并将压力保持在 处理容器，并且通过向处理容器中提供清洁气体以产生等离子体并将处理容器中的压力保持在高于第一压力的第二压力下，执行第二清洁处理。 因此，等离子体处理装置可以被有效且快速地清洁，而不会损坏由处理容器的内表面和处理容器中的构件组成的组中的至少一个。

公开(公告)号：US20100173467A1

公开(公告)日：2010-07-08

申请号：US12601831

申请日：2008-05-19

申请人： Yoshihiro Kato ,  Noriaki Fukiage

发明人： Yoshihiro Kato ,  Noriaki Fukiage

IPC分类号： H01L21/336 ,  H01L21/302 ,  H01L21/314 ,  H01B1/12

CPC分类号： H01L21/02211 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28518 ,  H01L21/31111 ,  H01L21/31604 ,  H01L21/76829 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film is used in a semiconductor device manufacturing process. The thin film contains silicon, germanium, and oxygen.

摘要翻译： 在半导体器件制造工艺中使用薄膜。 该薄膜含有硅，锗和氧。

公开(公告)号：US07371436B2

公开(公告)日：2008-05-13

申请号：US10644958

申请日：2003-08-21

申请人： Noriaki Fukiage

发明人： Noriaki Fukiage

IPC分类号： H05H1/24

CPC分类号： C23C16/45565 ,  C23C16/4411 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/5096 ,  H01L21/0276

摘要： A method and system for depositing a film with tunable optical and etch resistant properties on a substrate by plasma-enhanced chemical vapor deposition. A chamber has a plasma source and a substrate holder coupled to a RF source. A substrate is placed on the substrate holder. The TERA layer is deposited on the substrate. The amount of RF power provided by the RF source is selected such that the rate of deposition of at least one portion of the TERA layer is greater than when no RF power is applied the substrate holder.

摘要翻译： 一种用于通过等离子体增强化学气相沉积在衬底上沉积具有可调光学和耐蚀刻性质的膜的方法和系统。 腔室具有耦合到RF源的等离子体源和衬底保持器。 将衬底放置在衬底保持器上。 TERA层沉积在基底上。 选择由RF源提供的RF功率的量，使得TERA层的至少一部分的沉积速率大于不施加RF功率时的衬底保持器的沉积速率。

公开(公告)号：US20080000423A1

公开(公告)日：2008-01-03

申请号：US11835576

申请日：2007-08-08

申请人： Noriaki Fukiage

发明人： Noriaki Fukiage

IPC分类号： B05C11/00

CPC分类号： C23C16/4404 ,  C23C16/4405 ,  H01J37/32862 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/3148

摘要： A method and apparatus are included that provide an improved deposition process for a Tunable Etch Resistant ARC (TERA) layer with improved wafer to wafer uniformity and reduced particle contamination. More specifically, the processing chamber is seasoned to reduce the number of contaminant particles generated in the chamber during the deposition of the TERA layer and improve wafer to wafer uniformity. The apparatus includes a chamber having an upper electrode at least one RF source, a substrate holder, and a showerhead for providing multiple precursors and process gasses.

摘要翻译： 包括一种方法和装置，其提供了具有改进的晶片到晶片均匀性和减少的颗粒污染的可调谐蚀刻ARC（TERA）层的改进的沉积工艺。 更具体地说，处理室被调节以减少在沉积TERA层期间在室中产生的污染物颗粒的数量，并且将晶片提高到晶片的均匀性。 该装置包括具有至少一个RF源的上电极的腔室，衬底保持器和用于提供多个前体和处理气体的喷头。

公开(公告)号：US20050221020A1

公开(公告)日：2005-10-06

申请号：US10812354

申请日：2004-03-30

申请人： Noriaki Fukiage

发明人： Noriaki Fukiage

IPC分类号： C23C16/44 ,  H01J37/32 ,  H01L21/312 ,  H01L21/314 ,  H05H1/24 ,  C23C16/00

CPC分类号： C23C16/4404 ,  C23C16/4405 ,  H01J37/32862 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/3148

摘要： A method and apparatus are included that provide an improved deposition process for a Tunable Etch Resistant ARC (TERA) layer with improved wafer to wafer uniformity and reduced particle contamination. More specifically, the processing chamber is seasoned to reduce the number of contaminant particles generated in the chamber during the deposition of the TERA layer and improve wafer to wafer uniformity. The apparatus includes a chamber having an upper electrode at least one RF source, a substrate holder, and a showerhead for providing multiple precursors and process gasses.

摘要翻译： 包括一种方法和装置，其提供了具有改进的晶片到晶片均匀性和减少的颗粒污染的可调谐蚀刻ARC（TERA）层的改进的沉积工艺。 更具体地说，处理室被调节以减少在沉积TERA层期间在室中产生的污染物颗粒的数量，并且将晶片提高到晶片的均匀性。 该装置包括具有至少一个RF源的上电极的腔室，衬底保持器和用于提供多个前体和处理气体的喷头。