发明授权
US07718548B2 Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface
有权
用于改进的介电膜/铜线接口的选择性铜 - 氮化硅层形成
- 专利标题： Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface
- 专利标题（中）： 用于改进的介电膜/铜线接口的选择性铜 - 氮化硅层形成
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申请号： US11950691申请日： 2007-12-05
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公开(公告)号： US07718548B2公开(公告)日： 2010-05-18
- 发明人: Sang M. Lee , Vladimir Zubkov , Zhenijiang Cui , Meiyee Shek , Li-Qun Xia , Hichem M'Saad
- 申请人： Sang M. Lee , Vladimir Zubkov , Zhenijiang Cui , Meiyee Shek , Li-Qun Xia , Hichem M'Saad
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Townsend and Townsend and Crew
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.
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