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1.发明授权Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface 有权用于改进的介电膜/铜线接口的选择性铜 - 氮化硅层形成公开(公告)号：US07718548B2
公开(公告)日：2010-05-18
申请号：US11950691
申请日：2007-12-05
申请人： Sang M. Lee , Vladimir Zubkov , Zhenijiang Cui , Meiyee Shek , Li-Qun Xia , Hichem M'Saad
发明人： Sang M. Lee , Vladimir Zubkov , Zhenijiang Cui , Meiyee Shek , Li-Qun Xia , Hichem M'Saad
IPC分类号： H01L21/469
CPC分类号： H01L21/76856 , H01L21/76826 , H01L21/76849 , H01L21/76864 , H01L21/76867
摘要： A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.
摘要翻译： 描述了在半导体晶片上的铜表面上形成铜 - 氮化硅层的工艺。 该方法可以包括将晶片暴露于由氦制成的第一等离子体的步骤。 该方法还可以包括将晶片暴露于由还原气体制成的第二等离子体，其中第二等离子体从铜表面去除氧化铜，并将晶片暴露于硅烷，硅烷与铜表面反应以选择性地形成硅化铜 。 该方法还可以包括将晶片暴露于由氨和分子氮制成的第三等离子体，以形成铜氮化硅层。
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2.发明申请SELECTIVE COPPER-SILICON-NITRIDE LAYER FORMATION FOR AN IMPROVED DIELECTRIC FILM/COPPER LINE INTERFACE 有权改进的电介质膜/铜线接口的选择性铜 - 氮 - 氮层形成公开(公告)号：US20080213997A1
公开(公告)日：2008-09-04
申请号：US11950691
申请日：2007-12-05
申请人： Sang M. Lee , Vladimir Zubkov , Zhenijiang Cui , Meiyee Shek , Li-Qun Xia , Hichem M'Saad
发明人： Sang M. Lee , Vladimir Zubkov , Zhenijiang Cui , Meiyee Shek , Li-Qun Xia , Hichem M'Saad
IPC分类号： H01L21/768
CPC分类号： H01L21/76856 , H01L21/76826 , H01L21/76849 , H01L21/76864 , H01L21/76867
摘要： A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.
摘要翻译： 描述了在半导体晶片上的铜表面上形成铜 - 氮化硅层的工艺。 该方法可以包括将晶片暴露于由氦制成的第一等离子体的步骤。 该方法还可以包括将晶片暴露于由还原气体制成的第二等离子体，其中第二等离子体从铜表面去除氧化铜，并将晶片暴露于硅烷，硅烷与铜表面反应以选择性地形成硅化铜 。 该方法还可以包括将晶片暴露于由氨和分子氮制成的第三等离子体，以形成铜氮化硅层。
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