发明授权
US07723238B2 Method for preventing striation at a sidewall of an opening of a resist during an etching process
有权
在蚀刻过程中防止光刻胶的开口的侧壁上的条纹的方法
- 专利标题： Method for preventing striation at a sidewall of an opening of a resist during an etching process
- 专利标题（中）： 在蚀刻过程中防止光刻胶的开口的侧壁上的条纹的方法
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申请号： US11153539申请日： 2005-06-16
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公开(公告)号： US07723238B2公开(公告)日： 2010-05-25
- 发明人: Yuki Chiba
- 申请人： Yuki Chiba
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2004-177882 20040616; JP2005-137408 20050510
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
In a method for manufacturing a semiconductor device, a first high frequency power of a first frequency is applied to a processing gas to generate a plasma of the processing gas, a second high frequency power of a second frequency smaller than the first frequency is applied to a substrate to be processed. Further, a to-be-etched layer disposed under a resist film having a pattern of openings is etched by using the resist film as a mask, the to-be-etched layer being disposed on a surface of the substrate. In addition, dimensions of openings formed in the to-be-etched layer are controlled by varying an applied power of the first high frequency.
公开/授权文献
- US20050282394A1 Method for manufacturing a semiconductor device 公开/授权日：2005-12-22
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