发明授权
- 专利标题: Enhanced thin-film oxidation process
- 专利标题(中): 增强薄膜氧化工艺
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申请号: US11327612申请日: 2006-01-06
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公开(公告)号: US07723242B2公开(公告)日: 2010-05-25
- 发明人: Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
- 申请人: Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
- 申请人地址: US WA Camas
- 专利权人: Sharp Laboratories of America, inc.
- 当前专利权人: Sharp Laboratories of America, inc.
- 当前专利权人地址: US WA Camas
- 代理机构: Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
A method is provided for additionally oxidizing a thin-film oxide. The method includes: providing a substrate; depositing an MyOx (M oxide) layer overlying the substrate, where M is a solid element having an oxidation state in a range of +2 to +5; treating the MyOx layer to a high density plasma (HDP) source; and, forming an MyOk layer in response to the HDP source, where k>x. In one aspect, the method further includes decreasing the concentration of oxide charge in response to forming the MyOk layer. In another aspect, the MyOx layer is deposited with an impurity N, and the method further includes creating volatile N oxides in response to forming the MyOk layer. For example, the impurity N may be carbon and the method creates a volatile carbon oxide.
公开/授权文献
- US20060110939A1 Enhanced thin-film oxidation process 公开/授权日:2006-05-25