发明授权
- 专利标题： Positive resist compositions and patterning process
- 专利标题（中）： 正极抗蚀剂组成和图案化工艺
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申请号： US11773706申请日： 2007-07-05
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公开(公告)号： US07727704B2公开(公告)日： 2010-06-01
- 发明人: Ryosuke Taniguchi , Tsunehiro Nishi , Tomohiro Kobayashi
- 申请人： Ryosuke Taniguchi , Tsunehiro Nishi , Tomohiro Kobayashi
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2006-186304 20060706
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/20 ; G03F7/30 ; G03F7/38
摘要：
In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
公开/授权文献
- US20080008960A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS 公开/授权日：2008-01-10
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