利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.022 秒)

    Positive resist compositions and patterning process
    1.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号：US07727704B2

    公开(公告)日：2010-06-01

    申请号：US11773706

    申请日：2007-07-05

    申请人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    发明人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/2041 ,  Y10S430/111 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

    摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

    摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R2和R3是烷基，R4是一价烃基，X1是O，S或CH2CH2，X2是O，S，CH2或CH2CH2，n是1或2，a1，a2，c，d1和d2 各自为0至小于1，b为0.01至小于1，a1 + a2 + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

    Positive resist compositions and patterning process
    2.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号：US07691561B2

    公开(公告)日：2010-04-06

    申请号：US11773656

    申请日：2007-07-05

    申请人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    发明人： Ryosuke Taniguchi ,  Tsunehiro Nishi ,  Tomohiro Kobayashi

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0397 ,  Y10S430/108 ,  Y10S430/111

    摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

    摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X 1是O，S或CH 2 CH 2，X 2是O，S，CH 2或CH 2 CH 2，n是1或2，a和b各自为0.01至少 1，c，d1和d2各自为0至小于1，a + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

    Resist composition and patterning process using the same
    3.
    发明授权
    Resist composition and patterning process using the same 有权
    抗蚀剂组成和图案化工艺使用相同

    公开(公告)号：US08748076B2

    公开(公告)日：2014-06-10

    申请号：US13345355

    申请日：2012-01-06

    申请人： Takayuki Nagasawa ,  Tomohiro Kobayashi ,  Ryosuke Taniguchi ,  Masaki Ohashi

    发明人： Takayuki Nagasawa ,  Tomohiro Kobayashi ,  Ryosuke Taniguchi ,  Masaki Ohashi

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.

    摘要翻译： 公开了一种抗蚀剂组合物，其至少包含：（A）含有一个或多个具有下列通式（1）和/或（2）所示结构的重复单元的聚合物，该聚合物的碱溶性通过 一种酸，（B）一种光酸反应器，其响应于高能束，产生由以下通式（3）表示的磺酸，和（C）由以下通式（4）表示的磺酸盐。 可以存在不仅具有优异的LWR和图案轮廓的抗蚀剂组合物，而且还具有极好的抗倒伏性能，并且提供使用其的图案化工艺。

    Positive resist composition and patterning process
    7.
    发明授权
    Positive resist composition and patterning process 有权
    正抗蚀剂组成和图案化工艺

    公开(公告)号：US08795942B2

    公开(公告)日：2014-08-05

    申请号：US12000284

    申请日：2007-12-11

    申请人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Ryosuke Taniguchi

    发明人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Ryosuke Taniguchi

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： G03F7/0397 ,  G03F7/0045

    摘要： There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).

    摘要翻译： 公开了一种抗蚀剂组合物，其使用诸如ArF准分子激光器的高能束作为光源显着地提高了光刻的分辨率，并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。 正型抗蚀剂组合物至少包含（A）包含由以下通式（1）表示的重复单元的树脂组分; （B）在暴露于高能量束时产生由以下通式（2）表示的磺酸的光酸产生剂; 和（C）鎓盐，其中阳离子是由以下通式（3）表示的锍或由以下通式（4）表示的铵; 并且阴离子由以下通式（5）至（7）中的任一个表示。