发明授权
- 专利标题: Semiconductor wafer treatment method and apparatus therefor
- 专利标题(中): 半导体晶片处理方法及其装置
-
申请号: US11213809申请日: 2005-08-30
-
公开(公告)号: US07731801B2公开(公告)日: 2010-06-08
- 发明人: Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Junichiro Iwahashi , Koichi Okuda
- 申请人: Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Junichiro Iwahashi , Koichi Okuda
- 申请人地址: JP Tokyo
- 专利权人: Sumco Corporation
- 当前专利权人: Sumco Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Pillsbury Winthrop Shaw Pittman, LLP
- 优先权: JP2004-254561 20040901
- 主分类号: B08B6/00
- IPC分类号: B08B6/00 ; C25F1/00 ; C25F3/30
摘要:
In the ozone water treatment process, the silicon wafer is treated with the first ultra-pure water that includes ozone. The first ultra-pure water is refined by the ultraviolet ray sterilization method. The first ultra-pure water includes total organic carbon content of more than 1 μg/liter and not more than 20 μg/liter, so that the silicon wafer of the predetermined degree of cleanliness is obtained. The silicon wafer is treated by using the second ultra-pure water that has a lower TOC value than the first ultra-pure water in the ultra-pure water rinsing process (including the chemical solution cleaning process as required). The second ultra-pure water is refined by the ultraviolet ray oxidization method, and includes total organic carbon content with a concentration of 1 μg/liter or less. Thus the silicon wafer of the predetermined degree of cleanliness is obtained.
公开/授权文献
信息查询
IPC分类: