公开(公告)号：US07731801B2

公开(公告)日：2010-06-08

申请号：US11213809

申请日：2005-08-30

申请人： Makoto Takemura ,  Yasuo Fukuda ,  Kazuaki Souda ,  Junichiro Iwahashi ,  Koichi Okuda

发明人： Makoto Takemura ,  Yasuo Fukuda ,  Kazuaki Souda ,  Junichiro Iwahashi ,  Koichi Okuda

IPC分类号： B08B6/00 ,  C25F1/00 ,  C25F3/30

CPC分类号： H01L21/02052 ,  B08B3/04 ,  B08B2203/005 ,  H01L21/304

摘要： In the ozone water treatment process, the silicon wafer is treated with the first ultra-pure water that includes ozone. The first ultra-pure water is refined by the ultraviolet ray sterilization method. The first ultra-pure water includes total organic carbon content of more than 1 μg/liter and not more than 20 μg/liter, so that the silicon wafer of the predetermined degree of cleanliness is obtained. The silicon wafer is treated by using the second ultra-pure water that has a lower TOC value than the first ultra-pure water in the ultra-pure water rinsing process (including the chemical solution cleaning process as required). The second ultra-pure water is refined by the ultraviolet ray oxidization method, and includes total organic carbon content with a concentration of 1 μg/liter or less. Thus the silicon wafer of the predetermined degree of cleanliness is obtained.

摘要翻译： 在臭氧水处理工艺中，用包含臭氧的第一超纯水处理硅晶片。 第一超纯水通过紫外线灭菌法精制。 第一超纯水的总有机碳含量大于1μg/升且不大于20μg/升，从而获得预定清洁度的硅晶片。 在超纯水冲洗过程（包括所需的化学溶液清洗过程）中，使用具有比第一超纯水低的TOC值的第二超纯水处理硅晶片。 第二超纯水通过紫外线氧化法精制，其总有机碳含量为1μg/升以下。 因此，获得了预定清洁度的硅晶片。

公开(公告)号：US20060042654A1

公开(公告)日：2006-03-02

申请号：US11213809

申请日：2005-08-30

申请人： Makoto Takemura ,  Yasuo Fukuda ,  Kazuaki Souda ,  Junichiro Iwahashi ,  Koichi Okuda

发明人： Makoto Takemura ,  Yasuo Fukuda ,  Kazuaki Souda ,  Junichiro Iwahashi ,  Koichi Okuda

IPC分类号： C23G1/00 ,  B08B3/00

CPC分类号： H01L21/02052 ,  B08B3/04 ,  B08B2203/005 ,  H01L21/304

摘要： In the ozone water treatment process, the silicon wafer is treated with the first ultra-pure water that includes ozone. The first ultra-pure water is refined by the ultraviolet ray sterilization method. The first ultra-pure water includes total organic carbon content of more than 1 μg/liter and not more than 20 μg/liter, so that the silicon wafer of the predetermined degree of cleanliness is obtained. The silicon wafer is treated by using the second ultra-pure water that has a lower TOC value than the first ultra-pure water in the ultra-pure water rinsing process (including the chemical solution cleaning process as required). The second ultra-pure water is refined by the ultraviolet ray oxidization method, and includes total organic carbon content with a concentration of 1 μg/liter or less. Thus the silicon wafer of the predetermined degree of cleanliness is obtained.

摘要翻译： 在臭氧水处理工艺中，用包含臭氧的第一超纯水处理硅晶片。 第一超纯水通过紫外线灭菌法精制。 第一超纯水的总有机碳含量大于1mug /升且不超过20mug /升，从而获得了预定清洁度的硅晶片。 在超纯水冲洗过程（包括所需的化学溶液清洗过程）中，使用具有比第一超纯水低的TOC值的第二超纯水处理硅晶片。 第二超纯水通过紫外线氧化法精制，并且包括浓度为1杯/升或更低的总有机碳含量。 因此，获得了预定清洁度的硅晶片。