发明授权
- 专利标题： Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device
- 专利标题（中）： 绝缘靶材料，绝缘材料的制造方法，绝缘复合氧化物膜及器件
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申请号： US11511663申请日： 2006-08-29
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公开(公告)号： US07731933B2公开(公告)日： 2010-06-08
- 发明人: Takeshi Kijima , Takamitsu Higuchi
- 申请人： Takeshi Kijima , Takamitsu Higuchi
- 申请人地址： JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2005-249632 20050830
- 主分类号： C01G25/02
- IPC分类号： C01G25/02 ; C23C14/00
摘要：
An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.
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