发明授权
US07732831B2 Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed within
失效
其中形成有AlGaInP发光层的化合物半导体发光器件
- 专利标题： Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed within
- 专利标题（中）： 其中形成有AlGaInP发光层的化合物半导体发光器件
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申请号： US10594065申请日： 2006-09-26
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公开(公告)号： US07732831B2公开(公告)日： 2010-06-08
- 发明人: Ryouichi Takeuchi , Wataru Nabekura , Takashi Udagawa
- 申请人： Ryouichi Takeuchi , Wataru Nabekura , Takashi Udagawa
- 申请人地址： JP Tokyo
- 专利权人： Showa Denko K.K.
- 当前专利权人： Showa Denko K.K.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2004-095145 20040329
- 主分类号： H01L31/0272
- IPC分类号： H01L31/0272
摘要：
A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
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