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1.发明授权Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp 失效半导体发光器件，器件用电极，制造电极的方法，使用该器件的LED灯以及使用LED灯的光源公开(公告)号：US06677615B2
公开(公告)日：2004-01-13
申请号：US10265148
申请日：2002-10-07
IPC分类号： H01L2978
CPC分类号： H01L33/38
摘要： A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.
摘要翻译： 一种半导体发光器件，包括具有形成有第一电极的后表面的半导体衬底，包括发光部分并形成在半导体衬底上的半导体层，分别形成在第一电极上的多个分散电极 半导体层的与半导体层欧姆接触的一部分表面，覆盖半导体层的表面的透明导电膜和分散电极与分散电极导电，以及形成在半导体层上的焊盘电极 透明导电膜的一部分表面与透明导电膜导电。
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2.发明申请公开(公告)号：US20070215886A1
公开(公告)日：2007-09-20
申请号：US10594065
申请日：2005-03-28
CPC分类号： H01L33/30 , H01L33/0079 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
摘要翻译： 提供一种pn结合化合物半导体发光器件，其包括由n型或p型磷化铝镓磷化物构成的发光层和用于支撑层叠结构的透光性基板的层叠结构 并且层叠结构和透光性基板接合在一起，其中层叠结构包括n型或p型导体层，导体层和基板接合在一起，并且导体层由 含有硼的III-V族化合物半导体。
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公开(公告)号：US06512248B1
公开(公告)日：2003-01-28
申请号：US09691057
申请日：2000-10-19
IPC分类号： H01L2978
CPC分类号： H01L33/38
摘要： A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.
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4.发明授权公开(公告)号：US07790481B2
公开(公告)日：2010-09-07
申请号：US12121461
申请日：2008-05-15
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L33/0079 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
摘要翻译： 提供一种pn结合化合物半导体发光器件，其包括由n型或p型磷化铝镓磷化物构成的发光层和用于支撑层叠结构的透光性基板的层叠结构 并且层叠结构和透光性基板接合在一起，其中层叠结构包括n型或p型导体层，导体层和基板接合在一起，并且导体层由 含有硼的III-V族化合物半导体。
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5.发明授权Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed within 失效其中形成有AlGaInP发光层的化合物半导体发光器件公开(公告)号：US07732831B2
公开(公告)日：2010-06-08
申请号：US10594065
申请日：2006-09-26
IPC分类号： H01L31/0272
CPC分类号： H01L33/30 , H01L33/0079 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
摘要翻译： 提供一种pn结合化合物半导体发光器件，其包括由n型或p型磷化铝镓磷化物构成的发光层和用于支撑层叠结构的透光性基板的层叠结构 并且层叠结构和透光性基板接合在一起，其中层叠结构包括n型或p型导体层，导体层和基板接合在一起，并且导体层由 含有硼的III-V族化合物半导体。
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公开(公告)号：US08158987B2
公开(公告)日：2012-04-17
申请号：US13028370
申请日：2011-02-16
申请人： Wataru Nabekura , Ryouichi Takeuchi
发明人： Wataru Nabekura , Ryouichi Takeuchi
CPC分类号： H01L33/20 , H01L33/38 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2924/00014 , H01L2924/00
摘要： A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.
摘要翻译： 透明基板发光二极管（10）具有由化合物半导体构成的发光层（133），其中，在其上形成有第一电极（15）的光取出面的面积（A）和第二电极 与第一电极（15）极性不同的电极（16），形成为近光取出面的发光层（133）的面积（B）和背面的面积（C） 落在与用于形成第一电极（15）和第二电极（16）的相反侧的发光二极管相关，以满足A> C> B的关系。 本发明的发光二极管（10）由于发光层（133）的面积与透明基板的背面（23）的面积的关系以及形状的优化 透明基板（14）的侧面呈现出高亮度和高散热性能，并且与高电流配合使用。
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公开(公告)号：US20110133238A1
公开(公告)日：2011-06-09
申请号：US13028370
申请日：2011-02-16
申请人： Wataru NABEKURA , Ryouichi Takeuchi
发明人： Wataru NABEKURA , Ryouichi Takeuchi
CPC分类号： H01L33/20 , H01L33/38 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2924/00014 , H01L2924/00
摘要： A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.
摘要翻译： 透明基板发光二极管（10）具有由化合物半导体构成的发光层（133），其中，在其上形成有第一电极（15）的光取出面的面积（A）和第二电极 与第一电极（15）极性不同的电极（16），形成为近光取出面的发光层（133）的面积（B）和背面的面积（C） 落在与用于形成第一电极（15）和第二电极（16）的相反侧的发光二极管相关，以满足A> C> B的关系。 本发明的发光二极管（10）由于发光层（133）的面积与透明基板的背面（23）的面积的关系以及形状的优化 透明基板（14）的侧面呈现出高亮度和高散热性能，并且与高电流配合使用。
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公开(公告)号：US20060237741A1
公开(公告)日：2006-10-26
申请号：US10548534
申请日：2004-03-09
申请人： Ryouichi Takeuchi , Wataru Nabekura
发明人： Ryouichi Takeuchi , Wataru Nabekura
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/02 , H01L33/38
摘要： An LED (10) includes a compound semiconductor layer (13) that contains a light-emitting part and an alkali glass substrate (150) that contains at least 1 mass % of one element selected from sodium, calcium, barium and potassium and is transparent to light-emitting wavelength of the part. The substrate is fixed or joined in contact with the semiconductor layer. In a method for producing the diode (10), the semiconductor layer (13) is grown on a semiconductor substrate (1) untransparent to the wavelength, the grown semiconductor layer and alkali glass substrate are joined by the anode junction method, the untransparent substrate is removed, a first ohmic electrode (15) having a first polarity is formed on part of a main surface of the semiconductor layer, a second ohmic electrode (16) is formed on the semiconductor layer having a second polarity, and the first ohmic electrode and semiconductor layer are covered with a metal reflecting layer (14).
摘要翻译： LED（10）包括含有发光部的化合物半导体层（13）和含有至少1质量％的选自钠，钙，钡和钾中的一种元素的透明碱性玻璃基板（150） 到部分的发光波长。 衬底固定或接合与半导体层接触。 在制造二极管（10）的方法中，半导体层（13）生长在与波长不透明的半导体衬底（1）上，生长的半导体层和碱性玻璃衬底通过阳极接合方法接合，不透明衬底 ，在半导体层的主表面的一部分上形成具有第一极性的第一欧姆电极（15），在具有第二极性的半导体层上形成第二欧姆电极（16），并且第一欧姆电极 并且半导体层被金属反射层（14）覆盖。
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9.发明申请公开(公告)号：US20120080689A1
公开(公告)日：2012-04-05
申请号：US13321351
申请日：2010-05-13
申请人： Wataru Nabekura , Ryouichi Takeuchi
发明人： Wataru Nabekura , Ryouichi Takeuchi
CPC分类号： H01L33/44 , H01L33/305 , H01L33/382 , H01L33/40 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode having a high output, high efficiency, and a long service life under a high-humidity environment is provided. The light-emitting diode (1) includes a compound semiconductor layer (2) having a light-emitting section (7), ohmic electrodes (4, 5) provided on the main light extraction surface of the compound semiconductor layer (2), and an electrode protection layer (6) for protecting the ohmic electrodes (4, 5), wherein the Al concentrations of the surfaces (2a, 2b) of the compound semiconductor layer (2), which include the main light extraction surface, are 20% or less and the As concentration of the surfaces (2a, 2b) is less than 1%, and the electrode protection layer (6) has a two-layer structure composed of a first protective film (12) provided so as to cover the ohmic electrodes (4, 5) and a second protective film (13) provided so as to cover at least an end portion of the first protective film (12).
摘要翻译： 提供了一种在高湿度环境下具有高输出，高效率和长使用寿命的发光二极管。 发光二极管（1）包括具有发光部（7）的化合物半导体层（2），设置在化合物半导体层（2）的主光提取面上的欧姆电极（4,5），以及 用于保护欧姆电极（4,5）的电极保护层（6），其中包括主光提取表面的化合物半导体层（2）的表面（2a，2b）的Al浓度为20％ 以下，表面（2a，2b）的As浓度小于1％，电极保护层（6）具有由第一保护膜（12）构成的双层结构，该第一保护膜设置成覆盖欧姆 电极（4,5）和设置成覆盖至少第一保护膜（12）的端部的第二保护膜（13）。
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公开(公告)号：US20090278148A1
公开(公告)日：2009-11-12
申请号：US12158914
申请日：2006-12-22
申请人： Wataru Nabekura , Ryouichi Takeuchi
发明人： Wataru Nabekura , Ryouichi Takeuchi
CPC分类号： H01L33/20 , H01L33/38 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/49107 , H01L2924/00014 , H01L2924/00
摘要： A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.
摘要翻译： 透明基板发光二极管（10）具有由化合物半导体构成的发光层（133），其中，在其上形成有第一电极（15）的光取出面的面积（A）和第二电极 与第一电极（15）极性不同的电极（16），形成为近光取出面的发光层（133）的面积（B）和背面的面积（C） 落在与用于形成第一电极（15）和第二电极（16）的相反侧的发光二极管相关，以满足A> C> B的关系。 本发明的发光二极管（10）由于发光层（133）的面积与透明基板的背面（23）的面积的关系以及形状的优化 透明基板（14）的侧面呈现出高亮度和高散热性能，并且与高电流配合使用。
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