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1.发明授权公开(公告)号：US08901584B2
公开(公告)日：2014-12-02
申请号：US13255209
申请日：2010-03-03
IPC分类号： H01L33/00 , H01L23/00 , H01L33/12 , H01L33/30 , F21V7/00 , F21Y105/00 , F21Y101/02 , F21V7/09 , H01L33/08 , H01L33/20
CPC分类号： H01L33/30 , F21V7/0083 , F21V7/09 , F21Y2105/10 , F21Y2115/10 , H01L24/06 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/20 , H01L2224/05554 , H01L2224/05555 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/10158 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode including a compound semiconductor layer having at least a pn junction-type light emitting unit and a strain adjustment layer stacked on the light emitting unit, wherein the light emitting unit has a stacked structure containing a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0≦X≦0.1 and 0.39≦Y≦0.45 respectively) and a barrier layer, and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constants of the strained light emitting layer and the barrier layer. The light emitting diode has an emission wavelength of not less than 655 nm, exhibits excellent monochromaticity, high output and/or high efficiency, and has a fast response speed.
摘要翻译： 一种发光二极管，其包括具有至少pn结型发光单元的化合物半导体层和堆叠在所述发光单元上的应变调整层，其中所述发光单元具有包含具有组成的应变发光层的堆叠结构 （AlXGa1-X）YIn1-YP（其中X和Y分别为满足0＆nlE; X＆lt; ll; 0.1和0.39＆nlE; Y＆nlE; 0.45的数值）和阻挡层，并且应变调节层对于发射波长是透明的 并且具有小于应变发光层和阻挡层的晶格常数的晶格常数。 发光二极管具有不小于655nm的发射波长，显示出优异的单色性，高输出和/或高效率，并且具有快速的响应速度。
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公开(公告)号：US08217405B2
公开(公告)日：2012-07-10
申请号：US12952427
申请日：2010-11-23
IPC分类号： H01L21/00
CPC分类号： H01L33/02 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , Y10S438/936 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.
摘要翻译： 发光二极管包括基板，包括形成在基板上的pn结型发光部的化合物半导体层，配置在化合物半导体层上并由对所发出的光进行光学透明化的导电材料形成的导体 来自发光部分和具有比导体更高的电阻并且设置在化合物半导体层和电导体之间的中间的高电阻层。 在发光二极管灯的构造中，通过引线接合使设置在跨越发光层的与导电体相反一侧的半导体层上的电导体和电极呈现相等的电位。 发光二极管的亮度大，静电击穿电压也好。
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3.发明申请公开(公告)号：US20120168717A1
公开(公告)日：2012-07-05
申请号：US13496083
申请日：2010-09-15
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L24/45 , H01L33/0079 , H01L33/12 , H01L33/14 , H01L33/30 , H01L2224/05554 , H01L2224/05555 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2924/10158 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0≦X1≦1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0
摘要翻译： 公开了一种发光二极管，其具有红色和红外发射波长，优异的单色特性，高输出和高效率以及优异的耐湿性。 发光二极管设置有：发光部，其包括具有量子阱结构的有源层，并且交替地层叠由包含由（AlX1Ga1-X1）As（式中， 0＆lt; X1＆nlE; 1）和包含由组成式表示的组成式（Al x 2 Ga 1-x 2）As（0
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4.发明申请MULTICOLOR LIGHT EMITTING DIODE LAMP FOR PLANT GROWTH, ILLUMINATION APPARATUS, AND PLANT GROWTH METHOD 有权用于植物生长的发光二极管灯，照明设备和植物生长方法公开(公告)号：US20120124903A1
公开(公告)日：2012-05-24
申请号：US13388796
申请日：2010-08-05
申请人： Ryouichi Takeuchi
发明人： Ryouichi Takeuchi
CPC分类号： A01G7/045 , A01G7/04 , F21Y2101/00 , F21Y2113/10 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L2224/45144 , H01L2224/49175 , Y02P60/149 , H01L2924/00
摘要： In an illumination apparatus for plant growth using LEDs, a light source emitting mixed color light of red and blue is dominant light source. However, actually, the luminescence intensity of red light is weaker than that of blue light, and the color is adjusted by the number of lamps used. Thus, a small number of blue LEDs are interspersed among a large number of red LEDs, and there is a problem in that it is not possible to make irradiation of blue light uniform. The present invention provides a multicolor light emitting diode lamp in which a blue LED and a AlGaInP-based red LED having high luminescence efficiency, balancing with the blue LED are mounted in the same package. The red LED includes a light emitting section including a light emitting layer having a composition formula, (AlXGa1-X)YIn1-YP (0≦X≦1 and 0
摘要翻译： 在用于使用LED的植物生长的照明装置中，发射红色和蓝色的混合色光的光源是主要的光源。 然而，实际上，红光的发光强度比蓝光的发光强弱，并且通过使用的灯的数量来调节颜色。 因此，少量的蓝色LED分散在大量的红色LED中，并且存在不可能使蓝光的照射均匀的问题。 本发明提供了一种多色发光二极管灯，其中蓝色LED和具有高发光效率的AlGaInP基红色LED与蓝色LED平衡安装在同一封装中。 红色LED包括具有组成式（AlXGa1-X）YIn1-YP（0＆lt; nlE; X＆lt; ll; 1和0
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5.发明申请公开(公告)号：US20120007114A1
公开(公告)日：2012-01-12
申请号：US13255209
申请日：2010-03-03
IPC分类号： H01L33/30
CPC分类号： H01L33/30 , F21V7/0083 , F21V7/09 , F21Y2105/10 , F21Y2115/10 , H01L24/06 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/20 , H01L2224/05554 , H01L2224/05555 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/10158 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode including a compound semiconductor layer having at least a pn junction-type light emitting unit and a strain adjustment layer stacked on the light emitting unit, wherein the light emitting unit has a stacked structure containing a strained light emitting layer having a composition formula of (AlXGa1-X)YIn1-YP (wherein X and Y are numerical values that satisfy 0≦X≦0.1 and 0.39≦Y≦0.45 respectively) and a barrier layer, and the strain adjustment layer is transparent to the emission wavelength and has a lattice constant that is smaller than the lattice constants of the strained light emitting layer and the barrier layer. The light emitting diode has an emission wavelength of not less than 655 nm, exhibits excellent monochromaticity, high output and/or high efficiency, and has a fast response speed.
摘要翻译： 一种发光二极管，其包括具有至少pn结型发光单元的化合物半导体层和堆叠在所述发光单元上的应变调整层，其中所述发光单元具有包含具有组成的应变发光层的堆叠结构 （AlXGa1-X）YIn1-YP（其中X和Y分别为满足0＆nlE; X＆lt; ll; 0.1和0.39＆nlE; Y＆nlE; 0.45的数值）和阻挡层，并且应变调节层对于发射波长是透明的 并且具有小于应变发光层和阻挡层的晶格常数的晶格常数。 发光二极管具有不小于655nm的发射波长，显示出优异的单色性，高输出和/或高效率，并且具有快速的响应速度。
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公开(公告)号：US20100308365A1
公开(公告)日：2010-12-09
申请号：US12865331
申请日：2009-02-06
申请人： Kyosuke Masuya , Ryouichi Takeuchi
发明人： Kyosuke Masuya , Ryouichi Takeuchi
CPC分类号： H01L33/46 , H01L33/20 , H01L33/387
摘要： Disclosed is a compound semiconductor light emitting diode 101 including: a device structure portion 10 formed on a transparent base portion 25, the device structure portion 10 including a compound semiconductor layer having a first conductivity type, a light emitting layer 13 made of mixed crystals of aluminum phosphide gallium indium (having a composition of (AlXGa1-X)0.5In0.5P; 0≦X
摘要翻译： 公开了一种化合物半导体发光二极管101，包括：形成在透明基底部分25上的器件结构部分10，包括具有第一导电类型的化合物半导体层的器件结构部分10， 磷化铝镓铟（具有（AlXGa1-X）0.5In0.5P; 0＆amp; NlE; X <1）的组成，以及具有与第一导电类型相反的导电类型的化合物半导体层; 以及形成在器件结构部分10上的第一欧姆电极1，其中第二欧姆电极5形成在与透明基底部分25相反的一侧上，形成金属涂膜6以覆盖第二欧姆电极5， 形成覆盖金属覆膜6的金属基座部7与第二欧姆电极5电连接。
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7.发明授权公开(公告)号：US07842966B2
公开(公告)日：2010-11-30
申请号：US11994710
申请日：2006-07-05
IPC分类号： H01L31/00
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/387 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135)of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm−3 or less.
摘要翻译： 化合物半导体发光二极管包括由铝 - 镓铟磷化物形成的发光层（133），具有由III-V族化合物半导体单独形成的组分层的发光部分（13），透明支撑 层（14），其结合到所述发光部（13）的最外表面层（135）之一并且对从所述发光层（133）发射的光透明;以及接合层（141），形成在所述发光部 支撑层（14）和含有浓度为1×1020cm-3以下的氧原子的发光部（13）的最外表面层（135）之一。
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公开(公告)号：US20100258826A1
公开(公告)日：2010-10-14
申请号：US12747282
申请日：2008-11-25
申请人： Ryouichi Takeuchi
发明人： Ryouichi Takeuchi
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20 , H01L33/387 , H01L33/62 , H01L2224/73265 , H01L2933/0016 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting diode (1) of the invention is provided with: a light emitting section (3) which includes a light emitting layer (2); a substrate (5) that is joined to the light emitting section (3) via a semiconductor layer (4); a first electrode (6) on an upper surface of the light emitting section (3); a second electrode (7) on a bottom surface of the substrate (5); and an ohmic electrode (8) around an outer perimeter of the light emitting section (3) on the semiconductor layer (4), and in the outer perimeter of the light emitting section (3), the ohmic electrode (8) and the substrate (5) are conductive, and a penetrating electrode (9) is provided in the semiconductor layer (4), passing through the semiconductor layer (4) in a thickness direction. Thus, it is provided a light emitting diode with high brightness in which the current flowing in the light emitting layer is uniform, and the light emission efficiency from the light emitting layer is high.
摘要翻译： 本发明的发光二极管（1）具有：发光部（3），其包括发光层（2）; 经由半导体层（4）与发光部（3）接合的基板（5）。 在所述发光部（3）的上表面上的第一电极（6）; 在所述基板（5）的底面上的第二电极（7）; 以及围绕半导体层（4）上的发光部（3）的外周的欧姆电极（8），在发光部（3）的外周，欧姆电极（8）和基板 （5）是导电的，并且在半导体层（4）中设置穿透半导体层（4）的厚度方向的穿透电极（9）。 因此，提供了一种具有高亮度的发光二极管，其中在发光层中流动的电流是均匀的，并且来自发光层的发光效率高。
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公开(公告)号：US20060163603A1
公开(公告)日：2006-07-27
申请号：US10544940
申请日：2004-02-09
IPC分类号： H01L33/00
摘要： A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-side cladding layer includes an undoped AlInP layer (7) grown to have a thickness of 0.5 μm and an intermediate layer (8) doped to assume p-type conductivity and having an intermediate energy band gap value between that of the undoped AlInP layer and that of the window layer. The window layer on the intermediate layer is a GaP layer grown at 730° C. or higher and at a growth rate of 7.8 μm/hour or more in the presence of Ze serving as a dopant. The negative-electrode-side cladding layer is provided with an undoped AlInP layer (5) having a thickness of 0.1 μm or more. With this configuration, there is provided a light-emitting diode device that enhances the crystallinity of a window layer, prevents generation of faults caused by a high-temperature process and attains high luminance at a wavelength falling within a yellow-green band.
摘要翻译： 双异质结构发光二极管装置包括有源层（6），正电极侧覆层，负电极侧覆层（4），窗口层（9）和未掺杂的AlInP层。 正电极侧包覆层包括生长为厚度为0.5μm的未掺杂的AlInP层（7）和被掺杂为具有p型导电性的中间层（8），并且具有中间能带隙值 未掺杂的AlInP层和窗口层的。 中间层上的窗口层是在作为掺杂剂的Ze的存在下，在730℃以上，生长速度为7.8μm/小时以上的GaP层。 负极侧包层设置有厚度为0.1μm以上的未掺杂的AlInP层（5）。 采用这种结构，提供了一种提高窗口层的结晶度的发光二极管装置，防止由高温处理引起的故障的产生，并且在落在黄绿色带中的波长下获得高亮度。
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10.发明授权Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp 失效半导体发光器件，器件用电极，制造电极的方法，使用该器件的LED灯以及使用LED灯的光源公开(公告)号：US06677615B2
公开(公告)日：2004-01-13
申请号：US10265148
申请日：2002-10-07
IPC分类号： H01L2978
CPC分类号： H01L33/38
摘要： A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.
摘要翻译： 一种半导体发光器件，包括具有形成有第一电极的后表面的半导体衬底，包括发光部分并形成在半导体衬底上的半导体层，分别形成在第一电极上的多个分散电极 半导体层的与半导体层欧姆接触的一部分表面，覆盖半导体层的表面的透明导电膜和分散电极与分散电极导电，以及形成在半导体层上的焊盘电极 透明导电膜的一部分表面与透明导电膜导电。
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