发明授权
- 专利标题: Semiconductor memory device including recessed control gate electrode
- 专利标题(中): 半导体存储器件包括凹入控制栅电极
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申请号: US11808982申请日: 2007-06-14
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公开(公告)号: US07732855B2公开(公告)日: 2010-06-08
- 发明人: Sang-jin Park , Kwang-soo Seol , Yoon-dong Park , Sang-min Shin , In-jun Hwang , Sang-moo Choi , Ju-hee Park
- 申请人: Sang-jin Park , Kwang-soo Seol , Yoon-dong Park , Sang-min Shin , In-jun Hwang , Sang-moo Choi , Ju-hee Park
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2006-0101569 20061018
- 主分类号: H01L21/28
- IPC分类号: H01L21/28
摘要:
A semiconductor memory device may include a semiconductor substrate, at least one control gate electrode, at least one storage node layer, at least one tunneling insulating layer, at least one blocking insulating layer, and/or first and second channel regions. The at least one control gate electrode may be recessed into the semiconductor substrate. The at least one storage node layer may be between a sidewall of the at least one control gate electrode and the semiconductor substrate. The at least one tunneling insulating layer may be between the at least one storage node layer and the at least one control gate electrode. The at least one blocking insulating layer may be between the storage node layer and the control gate electrode. The first and second channel regions may be between the at least one tunneling insulating layer and the semiconductor substrate to surround at least a portion of the sidewall of the control gate electrode and/or may be separated from each other.