发明授权
US07736842B2 Resist composition for electron beam or EUV (extreme ultraviolet) and method for forming resist pattern
有权
用于电子束或EUV(极紫外)的抗蚀剂组合物和形成抗蚀剂图案的方法
- 专利标题: Resist composition for electron beam or EUV (extreme ultraviolet) and method for forming resist pattern
- 专利标题(中): 用于电子束或EUV(极紫外)的抗蚀剂组合物和形成抗蚀剂图案的方法
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申请号: US11573884申请日: 2005-09-01
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公开(公告)号: US07736842B2公开(公告)日: 2010-06-15
- 发明人: Hideo Hada , Daiju Shiono , Hiroo Kinoshita , Takeo Watanabe
- 申请人: Hideo Hada , Daiju Shiono , Hiroo Kinoshita , Takeo Watanabe
- 申请人地址: JP Kawasaki-shi
- 专利权人: Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人: Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Knobbe, Martens, Olson & Bear, LLP
- 优先权: JP2004-262488 20040909
- 国际申请: PCT/JP2005/016013 WO 20050901
- 国际公布: WO2006/027997 WO 20060316
- 主分类号: G03F7/039
- IPC分类号: G03F7/039 ; G03F7/20 ; G03F7/30 ; G03F7/38
摘要:
A resist composition for electron beam or extreme ultraviolet (EUV), comprising a resin component (A) which exhibits changed alkali solubility under action of acid, and a photoacid generator component (B) that generates acid on exposure, wherein the component (B) comprises at least one onium salt selected from the group consisting of onium salts having an anion represented by formula (b-0-1) or (b-0-2) shown below: wherein X represents an alkylene group having 2 to 6 carbon atoms, in which at least one hydrogen atom is substituted with a fluorine atom; and each of Y and Z independently represents an alkyl group having 1 to 10 atoms, in which at least one hydrogen atom is substituted with a fluorine atom.
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