发明授权
- 专利标题: Method of making a semiconductor device with embedded stressor
- 专利标题(中): 制造具有嵌入式应力源的半导体器件的方法
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申请号: US11756095申请日: 2007-05-31
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公开(公告)号: US07736957B2公开(公告)日: 2010-06-15
- 发明人: Paul A. Grudowski , Veeraraghavan Dhandapani , Darren V. Goedeke , Voon-Yew Thean , Stefan Zollner
- 申请人: Paul A. Grudowski , Veeraraghavan Dhandapani , Darren V. Goedeke , Voon-Yew Thean , Stefan Zollner
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 James L. Clingan, Jr.; Daniel D. Hill
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/84
摘要:
A method for forming a semiconductor device includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode over the gate dielectric; forming an insulating layer over a sidewall of the gate electrode; defining source and drain regions in the semiconductor substrate adjacent to the insulating layer; implanting a dopant in the source and drain regions of the semiconductor substrate to form doped source and drain regions; forming a sidewall spacer adjacent to the insulating layer; forming a recess in the semiconductor substrate in the source and drain regions, wherein the recess extends directly underneath the spacer a predetermined distance from a channel regions; and forming a stressor material in the recess. The method allows the stressor material to be formed closer to a channel region, thus improving carrier mobility in the channel while not degrading short channel effects.