发明授权
US07737468B2 Semiconductor devices having recesses filled with semiconductor materials
有权
具有填充有半导体材料的凹槽的半导体器件
- 专利标题： Semiconductor devices having recesses filled with semiconductor materials
- 专利标题（中）： 具有填充有半导体材料的凹槽的半导体器件
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申请号： US11804773申请日： 2007-05-21
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公开(公告)号： US07737468B2公开(公告)日： 2010-06-15
- 发明人: Jin-Ping Han , Henry Utomo , O Sung Kwon , Oh Jung Kwon , Judson Robert Holt , Thomas N. Adam
- 申请人： Jin-Ping Han , Henry Utomo , O Sung Kwon , Oh Jung Kwon , Judson Robert Holt , Thomas N. Adam
- 申请人地址： DE Neubiberg US NY Armonk
- 专利权人： Infineon Technologies AG,International Business Machines Corporation
- 当前专利权人： Infineon Technologies AG,International Business Machines Corporation
- 当前专利权人地址： DE Neubiberg US NY Armonk
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/20
摘要：
Semiconductor devices and methods of manufacturing thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a workpiece, and forming a recess in the workpiece. The recess has a depth having a first dimension. A first semiconductive material is formed in the recess to partially fill the recess in a central region to a height having a second dimension. The second dimension is about one-half or greater of the first dimension. A second semiconductive material is formed over the first semiconductive material in the recess to completely fill the recess, the second semiconductive material being different than the first semiconductive material.
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