发明授权
- 专利标题： Integrated circuit devices having uniform silicide junctions
- 专利标题（中）： 具有均匀硅化物结的集成电路器件
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申请号： US11853361申请日： 2007-09-11
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公开(公告)号： US07737512B2公开(公告)日： 2010-06-15
- 发明人: Se-myeong Jang , Gyo-young Jin , Yong-chul Oh , Hyun-chang Kim
- 申请人： Se-myeong Jang , Gyo-young Jin , Yong-chul Oh , Hyun-chang Kim
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec
- 优先权： KR02-026785 20020515
- 主分类号： H01L31/119
- IPC分类号： H01L31/119
摘要：
Integrated circuit devices are provided including an integrated circuit substrate and a gate on the integrated circuit substrate. The gate has sidewalls. A barrier layer spacer is provided on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is provided on the portion of the barrier layer spacer protruding from the sidewalls of the gate.
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