发明授权
US07737757B2 Low power level shifting latch circuits with gated feedback for high speed integrated circuits
失效
低功率电平移位锁存电路,具有门控反馈用于高速集成电路
- 专利标题: Low power level shifting latch circuits with gated feedback for high speed integrated circuits
- 专利标题(中): 低功率电平移位锁存电路,具有门控反馈用于高速集成电路
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申请号: US12178071申请日: 2008-07-23
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公开(公告)号: US07737757B2公开(公告)日: 2010-06-15
- 发明人: Derick Gardner Behrends , Travis Reynold Hebig , Daniel Mark Nelson , Jesse Daniel Smith
- 申请人: Derick Gardner Behrends , Travis Reynold Hebig , Daniel Mark Nelson , Jesse Daniel Smith
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Joan Pennington
- 主分类号: H03K19/0175
- IPC分类号: H03K19/0175
摘要:
Low power level shifter latch circuits with gated feedback for high speed integrated circuits, and a design structure on which the subject circuit resides are provided. A latch input stage operating in a domain of a first voltage supply receives a data input responsive to being enabled by predefined clock signals. A latch storage element coupled to the latch input stage includes a latch output stage operating in a domain of a second voltage supply provides a data output having a voltage level corresponding to the second voltage supply. The latch storage element includes a level shifting device providing level shifting from the first supply level to the second voltage supply level. The latch storage element includes feedback gate devices receiving the predefined clock signals to gate feedback to the latch input stage when data is being written to the latch input stage.
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