发明授权
US07740917B2 Method for forming thin film and base and having thin film formed by such method
失效
用这种方法形成薄膜和基底并具有薄膜的方法
- 专利标题： Method for forming thin film and base and having thin film formed by such method
- 专利标题（中）： 用这种方法形成薄膜和基底并具有薄膜的方法
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申请号： US10544084申请日： 2004-07-08
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公开(公告)号： US07740917B2公开(公告)日： 2010-06-22
- 发明人: Hiromoto Ii , Toshio Tsuji , Chikao Mamiya , Kazuhiro Fukuda , Kiyoshi Oishi , Takakazu Kiyomura
- 申请人： Hiromoto Ii , Toshio Tsuji , Chikao Mamiya , Kazuhiro Fukuda , Kiyoshi Oishi , Takakazu Kiyomura
- 申请人地址： JP Tokyo
- 专利权人： Konica Minolta Holdings, Inc.
- 当前专利权人： Konica Minolta Holdings, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Lucas & Mercanti, LLP
- 优先权： JP2003-197799 20030716; JP2004-037896 20040216
- 国际申请： PCT/JP2004/010085 WO 20040708
- 国际公布： WO2005/007927 WO 20050127
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; H05H1/24
摘要：
A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.