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    Method for forming thin film and base and having thin film formed by such method
    1.
    发明申请
    Method for forming thin film and base and having thin film formed by such method 失效
    用这种方法形成薄膜和基底并具有薄膜的方法

    公开(公告)号：US20060199014A1

    公开(公告)日：2006-09-07

    申请号：US10544084

    申请日：2004-07-08

    申请人： Hiromoto II ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

    发明人： Hiromoto II ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

    IPC分类号： B32B9/00

    CPC分类号： C23C16/45595 ,  C23C16/08 ,  C23C16/18 ,  C23C16/505 ,  C23C16/56 ,  Y10T428/31504

    摘要： A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

    摘要翻译： 一种形成膜的方法，包括第一工艺和第二工艺，所述第一工艺包括以下步骤：将放电气体供应到在大气压或大气压附近产生高频电场A的第一放电空间，由此放电气体 是激动的 将激发的放电气体的能量转移到成膜气体，由此成膜气体被激发; 并且将基板暴露于成膜气体以在基板上形成膜，第二工序包括以下步骤：将含氧化气体的气体供给到在大气中或接近大气压下产生高频电场B的第二放电空间 由此含有氧化气体的气体是激发的; 并且在第一工序中形成的膜暴露于含有氧化气体的激发气体。

    Method for forming thin film and base and having thin film formed by such method
    2.
    发明授权
    Method for forming thin film and base and having thin film formed by such method 失效
    用这种方法形成薄膜和基底并具有薄膜的方法

    公开(公告)号：US07740917B2

    公开(公告)日：2010-06-22

    申请号：US10544084

    申请日：2004-07-08

    申请人： Hiromoto Ii ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

    发明人： Hiromoto Ii ,  Toshio Tsuji ,  Chikao Mamiya ,  Kazuhiro Fukuda ,  Kiyoshi Oishi ,  Takakazu Kiyomura

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： C23C16/45595 ,  C23C16/08 ,  C23C16/18 ,  C23C16/505 ,  C23C16/56 ,  Y10T428/31504

    摘要： A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

    摘要翻译： 一种形成膜的方法，包括第一工艺和第二工艺，所述第一工艺包括以下步骤：将放电气体供应到在大气压或大气压附近产生高频电场A的第一放电空间，由此放电气体 是激动的 将激发的放电气体的能量转移到成膜气体，由此成膜气体被激发; 并且将基板暴露于成膜气体以在基板上形成膜，第二工序包括以下步骤：将含氧化气体的气体供给到在大气中或接近大气压下产生高频电场B的第二放电空间 由此含有氧化气体的气体是激发的; 并且在第一工序中形成的膜暴露于含有氧化气体的激发气体。

    GAS BARRIER FILM, RESIN BASE FOR ORGANIC ELECTROLUMINESCENT DEVICE, ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME, AND METHOD FOR PRODUCING GAS BARRIER FILM
    10.
    发明申请
    GAS BARRIER FILM, RESIN BASE FOR ORGANIC ELECTROLUMINESCENT DEVICE, ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME, AND METHOD FOR PRODUCING GAS BARRIER FILM 审中-公开
    气体阻隔膜，有机电致发光器件的树脂基底，使用其的有机电致发光器件及其制造气体隔膜的方法

    公开(公告)号：US20090167164A1

    公开(公告)日：2009-07-02

    申请号：US12297562

    申请日：2007-04-06

    申请人： Kazuhiro Fukuda ,  Koji Ozaki ,  Hiromoto Ii ,  Hiroaki Arita ,  Issei Suzuki

    发明人： Kazuhiro Fukuda ,  Koji Ozaki ,  Hiromoto Ii ,  Hiroaki Arita ,  Issei Suzuki

    IPC分类号： H01J1/62 ,  B32B27/06 ,  B05D1/04

    CPC分类号： H01L51/5206 ,  C09D1/00 ,  H01L51/5243 ,  H01L51/5253

    摘要： Disclosed is a gas barrier film which uses a polymerizable inorganic compound and has both high barrier property and high surface smoothness. Also disclosed are a resin base for organic electroluminescent devices using such a gas barrier film, an organic electroluminescent device and a method for producing a gas barrier film. The gas barrier film is characterized by comprising at least one ceramic film and a coating layer, which is formed through application of a coating liquid containing a polymerizable inorganic compound, on a resin film in this order. The gas barrier film is further characterized in that the ceramic film has a residual stress of not less than 0.01 MPa but not more than 20 MPa.

    摘要翻译： 公开了使用可聚合无机化合物并具有高阻隔性和高表面平滑性的阻气膜。 还公开了使用这种阻气膜的有机电致发光器件的树脂基底，有机电致发光器件和阻气膜的制造方法。 阻气膜的特征在于，在树脂膜上依次包含至少一个陶瓷膜和通过涂布含有可聚合无机化合物的涂布液形成的涂层。 阻气膜的特征还在于，陶瓷膜的残余应力为0.01MPa以上且20MPa以下。