发明授权
US07741222B2 Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
有权
蚀刻止蚀结构及其制造方法，半导体器件及其制造方法
- 专利标题： Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
- 专利标题（中）： 蚀刻止蚀结构及其制造方法，半导体器件及其制造方法
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申请号： US11102849申请日： 2005-04-11
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公开(公告)号： US07741222B2公开(公告)日： 2010-06-22
- 发明人: Young-Sub You , Jae-Young Park , Won-Shik Shin , Hyeon-Deok Lee , Ki-Vin Im , Seok-Woo Nam , Hun-Young Lim , Won-Jun Jang , Yong-Woo Hyung
- 申请人： Young-Sub You , Jae-Young Park , Won-Shik Shin , Hyeon-Deok Lee , Ki-Vin Im , Seok-Woo Nam , Hun-Young Lim , Won-Jun Jang , Yong-Woo Hyung
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2004-0082048 20041014
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
An etch stop layer is formed over a first structure by depositing a metal oxide material over the first structure and annealing the deposited metal oxide material. A second structure is formed over the etch stop layer, and a formation is etched through the second structure using the etch stop layer as an etch stop.
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