发明授权
- 专利标题： Semiconductor integrated circuit device and manufacturing method thereof
- 专利标题（中）： 半导体集成电路器件及其制造方法
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申请号： US12486944申请日： 2009-06-18
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公开(公告)号： US07741677B2公开(公告)日： 2010-06-22
- 发明人: Satoshi Sakai , Atsushi Hiraiwa , Satoshi Yamamoto
- 申请人： Satoshi Sakai , Atsushi Hiraiwa , Satoshi Yamamoto
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/113
摘要：
After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).